Container for storing wafer

ABSTRACT

The present invention relates to a container for storing a wafer, particularly to a container for storing a wafer in which a plurality of purging areas is vertically partitioned in the interior of a storage chamber, and a purge gas is sprayed into the plurality of purging areas, thereby allowing not only uniform purging of the wafer to be assured but also efficient purging of the wafer without waste of the purge gas to be achieved.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a U.S. National Stage of International PatentApplication No. PCT/KR2017/006703 filed Jun. 26, 2017, which claimspriority to and the benefit of Korean Patent Application No.10-2016-0085649 filed in the Korean Intellectual Property Office on Jul.6, 2016, the entire contents of which are incorporated herein byreference.

TECHNICAL FIELD

The present invention relates generally to a container for storing awafer. More particularly, the present invention relates to a containerfor storing a wafer, in which purge gas is supplied to a wafer stored ina storage chamber to remove fumes of the wafer.

BACKGROUND ART

Generally, semiconductor devices are manufactured by selectively andrepeatedly performing processes such as a deposition process, apolishing process, a photolithography process, an etching process, anion implantation process, a cleaning process, an inspection process, aheat treatment process, and the like; and the wafers are transported toa specific locations required in each process in order to be formed assemiconductor devices.

A wafer is a high-precision article that is stored or transported in awafer storage container such as a front opening unified pod (FOUP) toprevent contamination or damage from external contaminants and shocks.

In this case, process gas used during the processing and fumes asbyproducts in the processes, are not removed, but remain on the surfacesof the wafers. As a result, contamination of semiconductor manufacturingequipment during the process may occur, or the reliability of the wafermay be deteriorated due to a poor etch pattern of the wafer, or thelike.

Recently, to solve the above problem, purging techniques have beendeveloped to supply purge gas to the wafer accommodated in the containerfor storing a wafer in order to remove residual fumes on the wafersurface, or in order to prevent oxidation of the wafer.

To achieve purging of a wafer accommodated in a container for storing awafer, the container for storing a wafer is coupled to a supply devicesuch as a load port capable of supplying purge gas, and supplies purgegas to the wafer accommodated in the container for storing a wafer.Accordingly, the container for storing a wafer is provided with a flowpath where purge gas supplied from the supply device flows, and aninjection hole where the purge gas is injected.

As described above, a container for storing a wafer capable of supplyingpurge gas is disclosed in the document of Korean Patent ApplicationPublication No. 2015-0087015 (hereinafter, referred to as ‘conventionalart’).

The wafer cassette of the conventional art includes: a plurality ofstacking units configured to support a wafer and inject purge gas into astorage chamber; and an intake hole communicating with an exhaust memberto exhaust the purge gas and fumes of the wafer cassette.

Further, each of the plurality of stacking units is provided with apurge gas flow path in which purge gas flows, and a purge gas dischargehole communicating with the purge gas flow path. Accordingly, the purgegas is supplied from a purge gas supply source, then flows into thestacking units through a side gas line communicating with the purge gasflow paths, and is injected into the storage chamber through the purgegas discharge holes.

However, since the wafer cassette of the conventional art is configuredsuch that one side gas line communicates with the purge gas flow pathsprovided in the plurality of stacking units, it is impossible toindividually control the purge gas injected from each of the pluralityof stacking units. Accordingly, even in the case where wafers areaccommodated in a part of the storage chamber (for example, the casewhere wafers are stacked in the stacking units disposed at the lowerportion of the storage chamber), purge gas is injected also into middleand upper portions where wafers are not accommodated, and thus,unnecessary waste of purge gas may occur.

DISCLOSURE Technical Problem

Accordingly, the present invention has been made keeping in mind theabove problems occurring in the prior art, and it is a first object ofthe present invention to provide a container for storing a wafer, inwhich uniform purging of the wafer is ensured and the waste of purge gasis minimized.

Further, it is a second object of the present invention to provide acontainer for storing a wafer, in which purge gas injected into aplurality of purging areas partitioned in a vertical direction of thestorage chamber is individually controlled and injected, wherebyindependent purging of wafers can be achieved.

Further, it is a third object of the present invention to provide acontainer for storing a wafer, in which concave portions are provided ina plurality of supports provided in the storage chamber in the verticaldirection, whereby when the wafer is put in and taken out from thestorage chamber through the front opening, it is possible to prevent arobot arm transporting the wafer from being hindered.

Further, it is a fourth object of the present invention to provide acontainer for storing a wafer, in which when the wafer is supported onthe support, a gap formed between the support and the wafer isminimized, whereby vertical flow of the purge gas injected into thestorage chamber is minimized, and thus, individual injection of purgegas into a plurality of purging areas partitioned within the storagechamber can be performed more efficiently.

Further, it is a fifth object of the present invention to provide acontainer for storing a wafer, in which front exhaust members areprovided on opposite sides of the front of the storage chamber, wherebyexternal gas is prevented from entering the storage chamber, and thus,it is possible to achieve purging of wafer in the storage chamber moreefficiently.

Technical Solution

According to one aspect of the present invention, a container forstoring a wafer, the container includes: a storage chamber configuredsuch that a wafer is stored therein through a front opening; a pluralityof injection members configured to inject purge gas into the storagechamber; and an exhaust member configured to exhaust the purge gas andfumes of the storage chamber, wherein the storage chamber is divisibleinto a plurality of purging areas in a vertical direction, and theinjection members injecting the purge gas into the respective purgingareas are individually supplied with the purge gas and inject the purgegas into the respective purging areas.

Further, each of the plurality of injection members may be provided withan injection member inner wall surface in contact with the storagechamber, and the injection member inner wall surface may be formed withan injection hole to allow the purge gas to be injected into the storagechamber.

Further, the plurality of injection members may be arranged on top ofanother in the vertical direction to correspond to the plurality ofpurging areas divided vertically.

Further, the container may further include: a supply member configuredto supply the purge gas to the plurality of injection members, whereinthe supply member is provided with a plurality of vertical supply pathsextending in vertical directions, and the plurality of vertical supplypaths communicates with the plurality of injection members,respectively.

Further, the exhaust member may be provided with an exhaust member innerwall surface in contact with the storage chamber, and the exhaust memberinner wall surface may be formed with an exhaust hole to allow the purgegas and the fumes of the storage chamber to be exhausted to the exhaustmember.

Further, the exhaust member may be provided with a plurality of exhaustspaces communicating with the exhaust hole, and a plurality of verticalexhaust paths communicating with the plurality of exhaust spaces,respectively, wherein the plurality of exhaust spaces is arranged on topof another in the vertical direction within the exhaust member tocorrespond to the plurality of purging areas divided vertically.

Advantageous Effects

The container for storing a wafer according to the present inventionconfigured as described above has the following advantageous effects.

Since a sufficient amount of purge gas can be injected even into wafersaccommodated at the upper portion of the storage chamber, it is possibleto uniformly purge a plurality of wafers accommodated in the storagechamber, and thus, reliability of wafer manufacturing process can beguaranteed.

Further, since purging of the wafer can be achieved by selectivelyinjecting purge gas only into the area of the plurality of purgingareas, where wafers are positioned, unnecessary waste of purge gas canbe prevented.

DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view showing a container for storing a waferaccording to a preferred embodiment of the present invention;

FIG. 2 is an exploded perspective view of FIG. 1;

FIG. 3 is a front view of FIG. 1;

FIG. 4 is a front view showing the flow of purge gas injected into firstto third purging areas of FIG. 3;

FIG. 5 is a partial perspective view showing a first injection memberinner wall surface of FIG. 1;

FIG. 6 is a partial perspective view showing 1st-1st to 3rd-2ndinjection members of FIG. 1;

FIG. 7 is a partial perspective view showing the flow of the purge gasof the 1st-1st to 3rd-2nd injection members of FIG. 6;

FIG. 8 is a left side sectional view of FIG. 1;

FIG. 9 is a right side sectional view showing the flow of external gasexhausted to a first front exhaust member of FIG. 8 and the flow ofpurge gas and fumes exhausted to exhaust member;

FIG. 10 is a partial perspective view showing a second injection memberinner wall surface of FIG. 1;

FIG. 11 is a partial perspective view showing 1st-3rd to 3rd-4thinjection members of FIG. 1;

FIG. 12 is a partial perspective view showing the flow of purge gas ofthe 1st-3rd to 3rd-4th injection members of FIG. 11;

FIG. 13 is a right side sectional view of FIG. 1;

FIG. 14 is a right side sectional view showing the flow of external gasexhausted to a second front exhaust member of FIG. 13 and the flow ofpurge gas and fumes exhausted to the exhaust member;

FIG. 15 is a plan sectional view of FIG. 11;

FIG. 16 is a plan sectional view showing the flow of purge gas injectedto a wafer supported by a support FIG. 15 and the flow of the purge gasand fumes exhausted to the exhaust member;

FIG. 17 is a front view showing the exhaust member of FIG. 1;

FIG. 18 is a back side sectional view showing the exhaust member of FIG.17;

FIG. 19 is a right side view showing a first supply member of FIG. 1;

FIG. 20 is a left side view showing a second supply member of FIG. 1;

FIG. 21 is a plan view showing the support of FIG. 1;

FIG. 22 is a view showing a state where the wafer is supported by thesupport of FIG. 21;

FIG. 23 is a perspective view showing the right side surface of thefirst front exhaust member of FIG. 1;

FIG. 24 is a sectional perspective view showing the left side surface ofthe first front exhaust member of FIG. 23;

FIG. 25 is a perspective view showing the left side surface of thesecond front exhaust member of FIG. 1;

FIG. 26 is a sectional perspective view showing the right side surfaceof the second front exhaust member of FIG. 25;

FIG. 27 is an exploded perspective view showing a bottom plate of FIG.1;

FIG. 28 is a plan view showing the first bottom plate of FIG. 27;

FIG. 29 is a plan view showing a second bottom plate of FIG. 27;

FIG. 30 is a plan view showing a third bottom plate of FIG. 27;

FIG. 31 is a plan view showing a connection portion of FIG. 27;

FIG. 32 is a plan view showing the flow of the purge gas within thebottom plate of FIG. 27;

FIG. 33 is a schematic view showing the flow of injection/supply of thepurge gas of the container for storing a wafer according to thepreferred embodiment of the present invention; and

FIG. 34 is a schematic view showing the exhaust flow of the purge gas,the fumes, and the external gas of the container for storing a waferaccording to the preferred embodiment of the present invention.

MODE FOR INVENTION

‘Purge gas’ referred to below is a term collectively referring to aninert gas for removing fumes of a wafer, and in particular, may be anitrogen (N2) gas which is one of the inert gases.

Further, ‘purging’ is a term collectively referring to the prevention ofoxidation of a wafer by injecting purge gas to the wafer to removeresidual fumes on the wafer surface.

A container for storing a wafer according to the preferred embodiment ofthe present invention includes: a storage chamber configured such that awafer is stored therein through a front opening; a plurality ofinjection members configured to inject purge gas into the storagechamber; an exhaust member configured to exhaust the purge gas and fumesof the storage chamber; and a supply member configured to supply thepurge gas to the plurality of injection members.

The front opening is formed at the front of the storage chamber, and thewafer is put in and taken out from the storage chamber through the frontopening.

The storage chamber is provided therein with a support for supportingthe wafer, and the wafer is stored in the support by being supported bythe support, whereby the wafer stored through the front opening can beeasily accommodated therein.

The plurality of injection members injects the purge gas into thestorage where the wafer stored, the exhaust member exhausts the purgegas injected into the storage by the plurality of injection members andfumes of the storage chamber, and the supply member supplies the purgegas introduced from outside the container for storing a wafer to theplurality of injection members.

The storage chamber is divisible into a plurality of purging areas in avertical direction. In this case, the purging areas mean the areas whereeach of the plurality of injection members is individually supplied withthe purge gas and injects the purge gas into the storage chamber,thereby performing purging of the wafer.

The number of purging areas may be varied depending on the use and sizeof the container for storing a wafer within the scope of achieving theobject of the present invention.

Since the transfer of wafers to each process is often performed in aunit of 10 wafers in each wafer manufacturing process, it is preferablethat purging of 10 wafers is achieved in one purging area, and thenumber of wafers stored in the container for storing a wafer isgenerally 30.

Accordingly, when 30 wafers W are stored in the container for storing awafer, the purging area within the storage chamber may be, for example,may be divided into three purging areas.

In this case, it is preferable that the container for storing a wafer isprovided with three injection members, that is, first to third injectionmembers such that first to third purging areas are formed, andhereinafter, description will be made on the basis thereof.

As described above, when the first to third injection members areprovided to be individually supplied with purge gas and to inject thepurge gas into the storage chamber, the storage chamber is divisibleinto the first to third purging areas. In this case, the first injectionmember injects the purge gas into the first purging area, the secondinjection member injects the purge gas into the second purging area, andthe third injection member injects the purge gas into the third purgingarea, wherein the first to third purging areas are divided in thevertical direction within the storage chamber.

As such, to achieve the first to third purging areas divided in thevertical direction within the storage chamber when the first to thirdinjection members are individually supplied with the purge gas andinject the purge gas into the storage chamber, each of the first tothird injection members may be formed with an injection hole having avertical position corresponding to each of the first to third purgingareas.

For example, when the first to third purging areas are configured suchthat the first purging area, the second purging area, and the thirdpurging area are formed in the order from bottom to top within thestorage chamber (that is, the first purging area is the lower area ofthe storage chamber, the second purging area is the middle area of thestorage chamber, and the third purging are is the upper area of thestorage chamber), the injection hole formed in the first injectionmember may be formed at a position corresponding to the height of thefirst purging area (the lower area). Accordingly, the first injectionmember is individually supplied with the purge gas and can inject thepurge gas only into the first purging area, which is the lower area ofthe storage chamber.

Further, the injection hole formed in the second injection member may beformed at a position corresponding to the height of the second purgingarea (the middle area), and thus, the second injection member isindividually supplied with the purge gas and can inject the purge gasonly into the second purging area, which is the middle area of thestorage chamber.

Further, the injection hole formed in the third injection member may beformed at a position corresponding to the height of the third purgingarea (the upper area), and thus, the third injection member isindividually supplied with the purge gas and can inject the purge gasonly into the third purging area, which is the middle area of thestorage chamber.

As such, in the case of the container for storing a wafer of the presentinvention, as the first to third injection members are individuallysupplied with the purge gas and inject the same into the storagechamber, the first to third purging areas, which are divided in thevertical direction within the storage chamber, are formed.

Accordingly, the purge gas flow flowing into each of the first to thirdpurging areas is individually performed, and thus, unlike theconventional art, the purge gas flowing into the third purging area,which is the upper area of the storage chamber, does not have to flowinto the first purging area or the second purging area, so there is noloss of purge gas flow.

Accordingly, in the case of the container for storing a wafer of thepresent invention, unlike the conventional art, a sufficient amount ofpurge gas can be injected into the third purging area, which is theupper area of the storage chamber.

Further, as the purge gas supply to the first to third injection membersis controlled by individually supplying the purge gas to the first tothird injection members, the purge gas injected into the first to thirdpurging areas of the storage chamber can be controlled, and thus, thepurge gas can be injected only into the area, where the wafer is stored,of the first to third purging areas. Accordingly, it is possible toprevent the waste of the purge gas occurring when spraying the purge gasin the region where the wafer is not stored in the conventional art, andby removing the fumes of the wafer by injecting purge gas into the waferin accordance with the waiting time of the wafer stored in the storagechamber, it is possible to minimize the occurrence of wafer defectscaused by the failure to remove the fumes of some wafers.

As a configuration different from that in the above, to achieve thefirst to third purging areas divided in the vertical direction withinthe storage chamber when the first to third injection members areindividually supplied with the purge gas and inject the purge gas intothe storage chamber, the first to third injection members may bearranged on top of each other in the vertical direction to correspond tothe vertically divided first to third purging areas.

For example, when the first to third purging areas are configured suchthat the first purging area, the second purging area, and the thirdpurging area are formed in the order from bottom to top within thestorage chamber (that is, the first purging area is the lower area ofthe storage chamber, the second purging area is the middle area of thestorage chamber, and the third purging are is the upper area of thestorage chamber), the first to third injection members may also bearranged such that the first injection member, the second injectionmember, and the third injection member are disposed on top of each otherin the vertical direction. In this case, each of the first to thirdinjection members may be provided with an injection member inner wallsurface in contact with the storage chamber, and the injection memberinner wall surface may be formed with an injection hole to allow thepurge gas to be injected into the storage chamber.

Accordingly, the first injection member is individually supplied withthe purge gas and can inject the purge gas only into the first purgingarea through the injection hole formed in the injection member innerwall surface provided in the first injection member.

Further, the second injection member is individually supplied with thepurge gas and can inject the purge gas only into the second purging areathrough the injection hole formed in the injection member inner wallsurface provided in the second injection member, and the third injectionmember is individually supplied with the purge gas and can also injectthe purge gas only into the third purging area through the injectionhole formed in the injection member inner wall surface provided in thethird injection member.

As such, when the first to third injection members are arranged on topof each other in the vertical direction to inject purge gas into thefirst to third purging areas, respectively, each of the first to thirdinjection members may be divided into a plurality of injection membersthat inject the purge gas in multiple directions into each of the firstto third purging areas.

For example, the first injection member that injects the purge gas intothe first purging area may include: a 1st-1st injection member injectingthe purge gas into the front left of the first purging area; a 1st-2ndinjection member injecting the purge gas into the rear left of the firstpurging area; a 1st-3rd injection member injecting the purge gas intothe front right of the first purging area; and a 1st-4th injectionmember injecting the purge gas into the rear right of the first purgingarea.

The second injection member that injects the purge gas into the secondpurging area, as in the first injection member, may also include: a2nd-1st injection member injecting the purge gas into the front left ofthe second purging area; a 2nd-2nd injection member injecting the purgegas into the rear left of the second purging area; a 2nd-3rd injectionmember injecting the purge gas into the front right of the secondpurging area; and a 2nd-4th injection member injecting the purge gasinto the rear right of the second purging area.

The third injection member that injects the purge gas into the thirdpurging area, as in the first injection member, may also include: a3rd-1st injection member injecting the purge gas into the front left ofthe third purging area; a 3rd-2nd injection member injecting the purgegas into the rear left of the third purging area; a 3rd-3rd injectionmember injecting the purge gas into the front right of the third purgingarea; and a 3rd-4th injection member injecting the purge gas into therear right of the third purging area.

As such, as each of the first to third injection members is constitutedby the 1st-1st to 1st-4th injection members, the 2nd-1st to 2nd-4thinjection members, and the 3rd-1st to 3rd-4th injection members,respectively, the purge gas can be injected into each of the first tothird purging areas of the storage chamber without dead zones, and thus,it is possible to efficiently remove the fumes of the wafer stored inthe storage chamber.

Hereinbelow, as an embodiment of the container for storing a waferaccording to the preferred embodiment of the present invention, it willbe described on the basis that the plurality of injection members isconstituted by the first to third injection members, and each of thefirst to third injection members is constituted by the 1st-1st to1st-4th injection members, the 2nd-1st to 2nd-4th injection members, andthe 3rd-1st to 3rd-4th injection members, respectively.

In this case, 30 wafers are stored in the storage chamber, and theinside of the storage chamber is divided into the first to third purgingareas in the vertical direction by the first to third injection members.Accordingly, 10 wafers are disposed at each of the first to thirdpurging areas, and purging of each 10 wafers can be achieved by thefirst to third injection members, respectively.

Hereinbelow, reference will be made to a container 10 for storing awafer according to the preferred embodiment of the present inventionwith reference to the accompanying drawings.

FIG. 1 is a perspective view showing a container for storing a waferaccording to a preferred embodiment of the present invention; FIG. 2 isan exploded perspective view of FIG. 1; FIG. 3 is a front view of FIG.1; FIG. 4 is a front view showing the flow of purge gas injected intofirst to third purging areas of FIG. 3; FIG. 5 is a partial perspectiveview showing a first injection member inner wall surface of FIG. 1; FIG.6 is a partial perspective view showing 1st-1st to 3rd-2nd injectionmembers of FIG. 1; FIG. 7 is a partial perspective view showing the flowof the purge gas of the 1st-1st to 3rd-2nd injection members of FIG. 6;FIG. 8 is a left side sectional view of FIG. 1; FIG. 9 is a right sidesectional view showing the flow of external gas exhausted to a firstfront exhaust member of FIG. 8 and the flow of purge gas and fumesexhausted to exhaust member; FIG. 10 is a partial perspective viewshowing a second injection member inner wall surface of FIG. 1; FIG. 11is a partial perspective view showing 1st-3rd to 3rd-4th injectionmembers of FIG. 1; FIG. 12 is a partial perspective view showing theflow of purge gas of the 1st-3rd to 3rd-4th injection members of FIG.11; FIG. 13 is a right side sectional view of FIG. 1; FIG. 14 is a rightside sectional view showing the flow of external gas exhausted to asecond front exhaust member of FIG. 13 and the flow of purge gas andfumes exhausted to the exhaust member; FIG. 15 is a plan sectional viewof FIG. 11; FIG. 16 is a plan sectional view showing the flow of purgegas injected to a wafer supported by a support FIG. 15 and the flow ofthe purge gas and fumes exhausted to the exhaust member; FIG. 17 is afront view showing the exhaust member of FIG. 1; FIG. 18 is a back sidesectional view showing the exhaust member of FIG. 17; FIG. 19 is a rightside view showing a first supply member of FIG. 1; FIG. 20 is a leftside view showing a second supply member of FIG. 1; FIG. 21 is a planview showing the support of FIG. 1; FIG. 22 is a view showing a statewhere the wafer is supported by the support of FIG. 21; FIG. 23 is aperspective view showing the right side surface of the first frontexhaust member of FIG. 1; FIG. 24 is a sectional perspective viewshowing the left side surface of the first front exhaust member of FIG.23; FIG. 25 is a perspective view showing the left side surface of thesecond front exhaust member of FIG. 1; FIG. 26 is a sectionalperspective view showing the right side surface of the second frontexhaust member of FIG. 25; FIG. 27 is an exploded perspective viewshowing a bottom plate of FIG. 1; FIG. 28 is a plan view showing thefirst bottom plate of FIG. 27; FIG. 29 is a plan view showing a secondbottom plate of FIG. 27; FIG. 30 is a plan view showing a third bottomplate of FIG. 27; FIG. 31 is a plan view showing a connection portion ofFIG. 27; FIG. 32 is a plan view showing the flow of the purge gas withinthe bottom plate of FIG. 27; FIG. 33 is a schematic view showing theflow of injection/supply of the purge gas of the container for storing awafer according to the preferred embodiment of the present invention;and FIG. 34 is a schematic view showing the exhaust flow of the purgegas, the fumes, and the external gas of the container for storing awafer according to the preferred embodiment of the present invention.

The container 10 for storing a wafer according to the preferredembodiment of the present invention, as shown in FIGS. 1 to 3, includes:a storage chamber 200 configured such that a wafer W is stored thereinthrough a front opening 251; first to third injection members 310, 320,and 330 configured to inject purge gas into the storage chamber 200;first to eighth horizontal members 111 to 118 and first to sixthvertical members 121 to 126 forming frames of the first to thirdinjection members 310, 320, and 330; an exhaust member 400 configured toexhaust the purge gas and fumes of the storage chamber 200; a supplymember configured to supply the purge gas to the first to thirdinjection members 310, 320, and 330; a support 600 provided inside thestorage chamber 200 to support the wafer W; first and second frontexhaust members 710 and 750 disposed on the left and right sides of thefront of the storage chamber 200; a bottom plate 800 constituting abottom surface of the container 10 for storing a wafer; a connectionmember 850 provided at a location below the bottom plate 800; and a topplate 900 constituting a top surface of the container 10 for storing awafer.

Storage Chamber 200

Hereinbelow, reference will be made to the storage chamber 200.

As shown in FIGS. 1 to 3, the storage chamber 200 serves to store thewafer W therein, and is defined as an internal space surrounded by thefirst to third injection members 310, 320, and 330, and the exhaustmember 400.

At the front of the storage chamber 200, the front opening 251 isformed, and the wafer W is put in and taken out from the front opening251.

The top surface of the storage chamber 200 is constituted by the topplate 900, the bottom surface of the storage chamber 200 is constitutedby the bottom plate 800, and the circumferential surface of the storagechamber 200 is constituted by first and second injection member innerwall surfaces 340 and 350 and an exhaust member inner wall surface 440.

Accordingly, the storage chamber 200 is blocked by the top surface, thebottom surface, the top and bottom plates 800 of the circumferentialsurface, the first and second injection member inner wall surfaces 340and 350, and the exhaust member inner wall surface 440 excluding thefront opening 251.

Further, the first and second injection member inner wall surfaces 340and 350 constituting the circumferential surface of the storage chamber200, and the exhaust member inner wall surface 440 are formed withinjection holes 390 and an exhaust hole 490, respectively, whereby thepurge gas can be injected into the storage chamber 200 through theinjection holes 490, and the purge gas injected into the storage chamber200 and the fumes of the wafer W can be exhausted through the exhausthole 490.

The storage chamber 200 is provided therein with the support 600 forsupporting the wafer W, whereby the wafer W can be easily stored in thestorage chamber 200 by being supported by the support 600.

In this case, the support 600, as shown in FIGS. 5 and 10, may be easilyprovided in the first and second injection member inner wall surfaces340 and 350 by first and second support coupling parts 345 and 355respectively provided in the left rear and the right rear of the storagechamber 200.

Further, the support 600 may provided in plural in the verticaldirection according to the number of wafers W accommodated in thestorage chamber 200. Accordingly, in the storage chamber 200, 30supports 200 are provided to support the 30 wafers W, respectively, andthe details of the support 600 will be described hereinafter.

As shown in FIGS. 3 and 4, the inside of the storage chamber 200 isdivided into first to third purging areas 210, 220, and 230 in thevertical direction, and in this case, the first purging area 210, thesecond purging area 220, and the third purging area 230 are formed inthe order from bottom to top.

The first to third purging areas 210, 220, and 230 are virtual areasthat are divided within the storage chamber 200, in which the wafer W ispurged by the purge gas injected from the first to third injectionmembers 310, 320, and 330, respectively.

Accordingly, wafers W that are stored in the storage chamber 200 and aredisposed at the first purging area 210 are purged by the purge gasinjected from the first injection member 310, wafers W that are disposedat the second purging area 220 are purged by the purge gas injected fromthe second injection member 320, and wafers W that are disposed at thethird purging area 230 are purged by the purge gas injected from thethird injection member 330.

Further, the purge gas supplied to the first injection member 310, thepurge gas supplied to the second injection member 320, and the purge gassupplied to the third injection member 330 are individually supplied,and the detailed description thereof will be made hereinafter.

First to Third Injection Members 310, 320, and 330

Hereinbelow, reference will be made to the first to third injectionmembers 310, 320, and 330.

As shown in FIGS. 3 and 4, the first to third injection members 310,320, and 330 are disposed to surround the storage chamber 200, and arearranged such that the first injection member 310, the second injectionmember 320, and the third injection member 330 are disposed on top ofeach other in the vertical direction in the order from bottom to top, soas to respectively correspond to the first to third purging areas 210,220, and 230 vertically divided within the storage chamber 200.

In other words, the first injection member 310 is disposed above thebottom plate 800, the second injection member 320 is disposed above thefirst injection member 310, and the third injection member 330 isdisposed above the second injection member 320 and under the top plate900. In other words, the first to third injection members 310, 320, and330 are arranged into three layers in the vertical direction between thebottom plate 800 and the top plate 900. Accordingly, the partition ofthe first to third purging areas 210, 220, and 230 can be facilitated bythe purge gas injected from the first to third injection members 310,320, and 330, respectively.

As shown in FIGS. 6 and 11, the first to third injection members 310,320, and 330 may include 1st-1st to 1st-4th injection members 310 a to310 d, 2nd-1st to 2nd-4th injection members 320 a to 320 d, and 3rd-1stto 3rd-4th injection members 330 a to 330 d, respectively. In this case,the 1st-1st to 1st-4th injection members 310 a to 310 d inject the purgegas into the first purging area 210, the 2nd-1st to 2nd-4th injectionmembers 320 a to 320 d inject the purge gas into the second purging area220, and the 3rd-1st to 3rd-4th injection members 330 a to 330 d injectthe purge gas into the third purging area 230.

Further, the 1st-1st and 1st-2nd injection members 310 a and 310 b, the2nd-1st and 2nd-2nd injection members 320 a and 320 b, the 3rd-1st and3rd-2nd injection members 330 a and 330 b, the 1st-3rd and 1st-4thinjection members 310 c and 310 d, the 2nd-3rd and 2nd-4th injectionmembers 320 c and 320 d, and the 3rd-3rd and 3rd-4th injection members330 c and 330 d are individually supplied with the purge gas by the1st-1st to 3rd-2nd external supply lines (not shown), and the detaileddescription thereof will be made hereinafter.

As described above, the first injection member 310, the second injectionmember 320, and the third injection member 330 are arranged on top ofeach other in the vertical direction, and are distinguished verticallyfrom each other.

In other words, the 1st-1st and 1st-2nd injection members 310 a and 310b, the 2nd-1st and 2nd-2nd injection members 320 a and 320 b, and the3rd-1st and 3rd-2nd injection members 330 a and 330 b, which aredisposed on the left and rear left sides of the storage chamber 200, aredistinguished vertically from each other, and this vertical distinctionis as follows.

Between the 1st-1st and 1st-2nd injection members 310 a and 310 b andthe 2nd-1st and 2nd-2nd injection members 320 a and 320 b, a secondhorizontal member 112 is provided, such that the 1st-1st and 1st-2ndinjection members 310 a and 310 b and the 2nd-1st and 2nd-2nd injectionmembers 320 a and 320 b are distinguished vertically from each other.

Between the 2nd-1st and 2nd-2nd injection members 320 a and 320 b andthe 3rd-1st and 3rd-2nd injection members 330 a and 330 b, a thirdhorizontal member 113 is provided, such that the 2nd-1st and 2nd-2ndinjection members 320 a and 320 b and the 3rd-1st and 3rd-2nd injectionmembers 330 a and 330 b are distinguished vertically from each other.

Further, the 1st-3rd and 1st-4th injection members 310 c and 310 d, the2nd-3rd and 2nd-4th injection members 320 c and 320 d, and the 3rd-3rdand 3rd-4th injection members 330 c and 330 d, which are disposed on theright and rear right sides of the storage chamber 200, are distinguishedvertically from each other, and this vertical distinction is as follows.

Between the 1st-3rd and 1st-4th injection members 310 c and 310 d andthe 2nd-3rd and 2nd-4th injection members 320 c and 320 d, a sixthhorizontal member 116 is provided, such that the 1st-3rd and 1st-4thinjection members 310 c and 310 d and the 2nd-3rd and 2nd-4th injectionmembers 320 c and 320 d are distinguished vertically from each other.

Further, between the 2nd-3rd and 2nd-4th injection members 320 c and 320d and the 3rd-3rd and 3rd-4th injection members 330 c and 330 d, aseventh horizontal member 117 is provided, such that the 2nd-3rd and2nd-4th injection members 320 c and 320 d and the 3rd-3rd and 3rd-4thinjection members 330 c and 330 d are distinguished vertically from eachother.

Further, between each of the 1st-1st injection member 310 a and the1st-2nd injection member 310 b, the 2nd-1st injection member 320 a andthe 2nd-2nd injection member 320 b, and the 3rd-1st injection member 330a and the 3rd-2nd injection member 330 b, which are disposed on the leftand rear left sides of the storage chamber 200, a second vertical member122 is provided. Accordingly, the 1st-1st injection member 310 a and the1st-2nd injection member 310 b are distinguished horizontally from eachother, the 2nd-1st injection member 320 a and the 2nd-2nd injectionmember 320 b are distinguished horizontally from each other, and the3rd-1st injection member 330 a and the 3rd-2nd injection member 330 bare distinguished horizontally from each other.

Further, between each of the 1st-3rd injection member 310 c and the1st-4th injection member 310 d, the 2nd-3rd injection member 320 c andthe 2nd-4th injection member 320 d, and the 3rd-3rd injection member 330c and the 3rd-4th injection member 330 d, which are disposed on theright and rear right sides of the storage chamber 200, a fifth verticalmember 125 is provided. Accordingly, the 1st-3rd injection member 310 cand the 1st-4th injection member 310 d are distinguished horizontallyfrom each other, the 2nd-3rd injection member 320 c and the 2nd-4thinjection member 320 d are distinguished horizontally from each other,and the 3rd-3rd injection member 330 c and the 3rd-4th injection member330 d are distinguished horizontally from each other.

The inner surfaces of the 1st-1st and 1st-2nd injection members 310 aand 310 b, the 2nd-1st and 2nd-2nd injection members 320 a and 320 b,and the 3rd-1st and 3rd-2nd injection members 330 a and 330 b areconstituted by a first injection member inner wall surface 340; and theouter surfaces of the 1st-1st and 1st-2nd injection members 310 a and310 b, the 2nd-1st and 2nd-2nd injection members 320 a and 320 b, andthe 3rd-1st and 3rd-2nd injection members 330 a and 330 b areconstituted by a first injection member outer wall surface 361.

In this case, the first injection member inner wall surface 340 isprovided between the storage chamber 200, and the 1st-1st and 1st-2ndinjection members 310 a and 310 b, the 2nd-1st and 2nd-2nd injectionmembers 320 a and 320 b, and the 3rd-1st and 3rd-2nd injection members330 a and 330 b.

Accordingly, the first injection member inner wall surface 340constitutes the inner surfaces of the 1st-1st and 1st-2nd injectionmembers 310 a and 310 b, the 2nd-1st and 2nd-2nd injection members 320 aand 320 b, and the 3rd-1st and 3rd-2nd injection members 330 a and 330b, and constitutes the outer surface (or the circumferential surface) ofthe storage chamber 200, simultaneously. In other words, the 1st-1st and1st-2nd injection members 310 a and 310 b, the 2nd-1st and 2nd-2ndinjection members 320 a and 320 b, and the 3rd-1st and 3rd-2nd injectionmembers 330 a and 330 b are in contact with the left and rear left sidesof the storage chamber 200 by the first injection member inner wallsurface 340.

The first injection member outer wall surface 361 is provided spacedfrom the first injection member inner wall surface 340 in a directionopposite to the storage chamber 200, and a gap is provided between thefirst injection member inner wall surface 340 and the first injectionmember outer wall surface 361.

Accordingly, each of the 1st-1st and 1st-2nd injection members 310 a and310 b, the 2nd-1st and 2nd-2nd injection members 320 a and 320 b, andthe 3rd-1st and 3rd-2nd injection members 330 a and 330 b is defined bythe gap between the first injection member inner wall surface 340 andthe first injection member outer wall surface 361.

The inner surfaces of the 1st-3rd and 1st-4th injection members 310 cand 310 d, the 2nd-3rd and 2nd-4th injection members 320 c and 320 d,and the 3rd-3rd and 3rd-4th injection members 330 c and 330 d areconstituted by a second injection member inner wall surface 350; and theouter surfaces of the 1st-3rd and 1st-4th injection members 310 c and310 d, the 2nd-3rd and 2nd-4th injection members 320 c and 320 d, andthe 3rd-3rd and 3rd-4th injection members 330 c and 330 d areconstituted by a second injection member outer wall surface 362.

In this case, the second injection member inner wall surface 350 isprovided between the storage chamber 200, and the 1st-3rd and 1st-4thinjection members 310 c and 310 d, the 2nd-3rd and 2nd-4th injectionmembers 320 c and 320 d, and the 3rd-3rd and 3rd-4th injection members330 c and 330 d.

Accordingly, the second injection member inner wall surface 350constitutes the inner surfaces of the 1st-3rd and 1st-4th injectionmembers 310 c and 310 d, the 2nd-3rd and 2nd-4th injection members 320 cand 320 d, and the 3rd-3rd and 3rd-4th injection members 330 c and 330d, and constitutes the outer surface (or the circumferential surface) ofthe storage chamber 200, simultaneously. In other words, the 1st-3rd and1st-4th injection members 310 c and 310 d, the 2nd-3rd and 2nd-4thinjection members 320 c and 320 d, and the 3rd-3rd and 3rd-4th injectionmembers 330 c and 330 d are in contact with the right and rear rightsides of the storage chamber 200 by the second injection member innerwall surface 350.

The second injection member outer wall surface 362 is provided spacedfrom the second injection member inner wall surface 350 in the directionopposite to the storage chamber 200, and a gap is provided between thesecond injection member inner wall surface 350 and the second injectionmember outer wall surface 362.

Accordingly, each of the 1st-3rd and 1st-4th injection members 310 c and310 d, the 2nd-3rd and 2nd-4th injection members 320 c and 320 d, andthe 3rd-3rd and 3rd-4th injection members 330 c and 330 d is defined bythe gap between the second injection member inner wall surface 350 andthe second injection member outer wall surface 362.

The above described 1st-1st to 3rd-4th injection members 310 a to 330 dmay be provided with a heater (not shown) for controlling thetemperature and humidity inside the storage chamber 200.

The heater may be configured such that 1st-1st to 3rd-4th heaters areprovided to correspond to the 1st-1st to 3rd-4th injection members 310 ato 330 d.

The 1st-1st to 3rd-4th heaters may be disposed on the outer surfaces ofthe first and second injection member outer wall surfaces 361 and 362 tobe provided in the outer sides of the 1st-1st to 3rd-4th injectionmembers 310 a to 330 d.

In this case, to prevent the 1st-1st to 3rd-4th heaters from beingexposed to the outside, it is preferable to provide a cover (not shown)at a position spaced outwardly from the first and second injectionmember outer wall surfaces 361 and 362. Accordingly, the outermostcircumferential surface of the container 10 for storing a wafer isconstituted by the cover, and the 1st-1st to 3rd-4th heaters aredisposed between the first and second injection member outer wallsurfaces 361 and 362, and the cover.

It is preferable that the 1st-1st to 3rd-4th heaters are individuallycontrolled, and thus, it is possible to operate only a heater of the1st-1st to 3rd-4th injection members 310 a to 330 d to correspond to aninjection member injecting the purge gas into the first to third purgingareas 210, 220, and 230.

For example, when the 2nd-2nd injection member 320 b injects the purgegas into the second purging area 220, the 2nd-2nd heater is operated,thereby heating the purge gas injected into the 2nd-2nd injection member320 b and the second purging area 220 of the storage chamber 200.Accordingly, the purging of the wafer W accommodated in the secondpurging area 220 can be easily performed, and the humidity inside thesecond purging area 220 is lowered, and thus, oxidation of the wafer Wcan be prevented.

As such, individual control of the 1st-1st to 3rd-4th heaters may beperformed in conjunction with individual control of the 1st-1st to3rd-4th injection members 310 a to 330 d. Accordingly, the temperatureand humidity control can be achieved by the heater only in the desiredpurging area of the first to third purging areas 210, 220, and 230,thereby preventing oxidation of the wafer W with minimal energy(electricity, etc.).

Injection Hole 390

Hereinbelow, reference will be made to the injection holes 390 formed inthe first injection member inner wall surface 340 and the secondinjection member inner wall surface 350.

As shown in FIGS. 3, 5, 8, 10 and 13, the first injection member innerwall surface 340 and the second injection member inner wall surface 350are formed with a plurality of injection holes 390.

In this case, a plurality of injection holes 390 may be formed in theform of a matrix having rows and columns, and as described above, sincethe container 10 for storing a wafer according to the preferredembodiment of the present invention is configured to store 30 wafers Wand purge the same, it is preferable that the plurality of injectionholes 390 has 30 rows.

Further, it is preferable that the plurality of injection holes 390 isdisposed above the 30 supports 600, respectively. In other words, as theplurality of injection holes 390 is formed in the first and secondinjection member inner wall surfaces 340 and 350 such that the pluralityof injection holes 390 is disposed at positions above and under thesupports 600, the purge gas can be easily injected above the 30 wafers Wsupported by the 30 supports 600, respectively.

Of the injection holes 390 formed in the first injection member innerwall surface 340, the injection holes 390 disposed at positionscorresponding to the height of the first purging area 210 communicatethe 1st-1st and 1st-2nd injection members 310 a and 310 b and the leftand rear left sides of the first purging area 210 with each other.Accordingly, the purge gas supplied into the 1st-1st and 1st-2ndinjection members 310 a and 310 b can be injected into the left and rearleft sides of the first purging area 210 through the injection holes.

Of the injection holes 390 formed in the first injection member innerwall surface 340, the injection holes 390 disposed at positionscorresponding to the height of the second purging area 220 communicatethe 2nd-1st and 2nd-2nd injection members 320 a and 320 b and the leftand rear left sides of the second purging area 220 with each other.Accordingly, the purge gas supplied into the 2nd-1st and 2nd-2ndinjection members 320 a and 320 b can be injected into the left and rearleft sides of the first purging area 210 through the injection holes.

Of the injection holes 390 formed in the first injection member innerwall surface 340, the injection holes 390 disposed at positionscorresponding to the height of the third purging area 230 communicatethe 3rd-1st and 3rd-2nd injection members 330 a and 330 b and the leftand rear left sides of third purging area 230 with each other.Accordingly, the purge gas supplied into the 3rd-1st and 3rd-2ndinjection members 330 a and 330 b can be injected into the left and rearleft sides of the first purging area 210 through the injection holes.

Of the injection holes 390 formed in the second injection member innerwall surface 350, the injection holes 390 disposed at positionscorresponding to the height of the first purging area 210 communicatethe 1st-3rd and 1st-4th injection members 310 c and 310 d and the rightand rear right sides of the first purging area 210 with each other.Accordingly, the purge gas supplied into the 1st-3rd and 1st-4thinjection members 310 c and 310 d can be injected into the right andrear right sides of the first purging area 210 through the injectionholes.

Of the injection holes 390 formed in the second injection member innerwall surface 350, the injection holes 390 disposed at positionscorresponding to the height of the second purging area 220 communicatethe 2nd-3rd and 2nd-4th injection members 320 c and 320 d and the rightand rear right sides of the second purging area 220 with each other.Accordingly, the purge gas supplied into the 2nd-3rd and 2nd-4thinjection members 320 c and 320 d can be injected into the right andrear right sides of the first purging area 210 through the injectionholes.

Of the injection holes 390 formed in the second injection member innerwall surface 350, the injection holes 390 disposed at positionscorresponding to the height of the third purging area 230 communicatethe 3rd-3rd and 3rd-4th injection members 330 c and 330 d and the rightand rear right sides of the third purging area 230 with each other.Accordingly, the purge gas supplied into the 3rd-3rd and 3rd-4thinjection members 330 c and 330 d can be injected into the right andrear right sides of the first purging area 210 through the injectionholes.

As such, the 1st-1st to 3rd-4th injection members 310 a to 330 d injectthe purge gas into the first to third purging areas 210, 220, and 230,that is, into the storage chamber 200 through the injection holes formedin the first injection member inner wall surface 340 and the secondinjection member inner wall surface 350.

In this case, as the predetermined purge gas is supplied into and storedin each of the 1st-1st to 3rd-2nd injection members 310 a to 330 b, theinternal pressure of the purge gas stored in each of the injectionmembers is increased, and by this internal pressure, the purge gas isinjected into the first to third purging areas 210, 220, and 230 throughthe injection holes 390.

As such, as the purge gas is injected from the injection holes 390 ofthe first injection member inner wall surface 340 and the secondinjection member inner wall surface 350 constituting the circumferentialsurface of the storage chamber 200, dead zones can be minimized comparedto the conventional art.

To be more specific, in the case of the conventional art, separateinjection members provided with injection holes are provided on oppositeside surfaces of the storage chamber to inject purge gas, but in thecase of the container 10 for storing a wafer according to the preferredembodiment of the present invention, the injection holes 390 aredirectly formed in the first and second injection member inner wallsurfaces 340 and 350 to inject purge gas. Accordingly, by simply formingthe injection holes 390 in the first and second injection member innerwall surfaces 340 and 350, the direction of the purge gas injected intothe first to third purging areas 210, 220, and 230 can be easilyadjusted, and thus, it is possible to easily form an optimal array ofthe injection holes 390, which minimizes the occurrence of dead zones.

Further, as the injection holes 390 are formed in the first and secondinjection member inner wall surfaces 340 and 350, it is possible toeasily add the number of injection holes 390, and when the number ofinjection holes 390 is increased and accordingly a plurality ofinjection holes 390 is closely arranged, it is possible to achieve akind of surface injection effect, in which it seems like that the purgegas is injected from the entire first and second injection member innerwall surfaces 340 and 350 that are the circumferential surface of thestorage chamber 200. Accordingly, unlike the conventional art, a uniforminjection pressure can be ensured, whereby it is possible to prevent thepurge gas from being injected intensively only in a part of the wafer W.

Further, when the injection holes 390 are contaminated and clogged bythe fumes as the container 10 for storing a wafer is used for a longtime, the problems caused by clogging of the injection holes 390 can besolved by replacing the first and second injection member inner wallsurfaces 340 and 350, and thus, easy maintenance of the container 10 forstoring a wafer can be achieved.

Further, unlike the above described embodiment, the injection holes 390may have rows more than 30 in the first and second injection memberinner wall surfaces 340 and 350 in the vertical direction. In otherwords, two or more injection holes 390 may be formed between neighboringsupports 600 in the vertical direction instead one injection hole 390formed therebetween. Accordingly, at one purging area, more than 10injection holes 390 may be formed, and thus, the purging of the wafer Wmay be more easily achieved.

Further, the injection holes 390 may be formed to have various shapessuch as a rectangular slit shape, a slit shape having an arc at an end,an annular hole shape, a polygonal hole shape, or the like.

1st-1st to 3rd-2nd Supply Holes 371 a to 373 b and 1st-3rd to 3rd-4thSupply Holes 371 c to 373 d

Hereinbelow, reference will be made to 1st-1st to 3rd-2nd supply holes371 a to 373 b formed in the first injection member outer wall surface361, and 1st-3rd to 3rd-4th supply holes 371 c to 373 d formed in thesecond injection member outer wall surface 362.

As shown in FIGS. 6 and 7, the 1st-1st to 3rd-2nd supply holes 371 a to373 b are formed in the first injection member outer wall surface 361.

The 1st-1st supply hole 371 a communicates the inside of the 1st-1stinjection member 310 a and a 1st-1st supply space 531 a of the firstsupply member 510 with each other, and thus, the purge gas of the1st-1st supply space 531 a can flow to the inside of the 1st-1stinjection member 310 a.

The 1st-2nd supply hole 371 b communicates the inside of the 1st-2ndinjection member 310 b and a 1st-2nd supply space 531 b of the firstsupply member 510 with each other, and thus, the purge gas of the1st-2nd supply space 531 b can flow to the inside of the 1st-2ndinjection member 310 b.

The 2nd-1st supply hole 372 a communicates the inside of the 2nd-1stinjection member 320 a and a 2nd-1st supply space 532 a of the firstsupply member 510 with each other, and thus, the purge gas of the2nd-1st supply space 532 a can flow to the inside of the 2nd-1stinjection member 320 a.

The 2nd-2nd supply hole 372 b communicates the inside of the 2nd-1stinjection member 320 a and a 2nd-1st supply space 532 a of the firstsupply member 510 with each other, and thus, the purge gas of the2nd-1st supply space 532 a can flow to the inside of the 2nd-1stinjection member 320 a.

The 3rd-1st supply hole 373 a communicates the inside of the 3rd-1stinjection member 330 a and a 3rd-1st supply space 533 a of the firstsupply member 510 with each other, and thus, the purge gas of the3rd-1st supply space 533 a can flow to the inside of the 3rd-1stinjection member 330 a.

The 3rd-2nd supply hole 373 b communicates the inside of the 3rd-2ndinjection member 330 b and a 3rd-2nd supply space 533 b of the firstsupply member 510 with each other, and thus, the purge gas of the3rd-2nd supply space 533 b can flow to the inside of the 3rd-2ndinjection member 330 b.

As shown in FIGS. 11 and 12, the 1st-3rd to 3rd-4th supply holes 371 cto 373 d are formed in the second injection member outer wall surface362.

The 1st-3rd supply hole 371 c communicates the inside of the 1st-3rdinjection member 310 c and a 1st-3rd supply space 531 c of the secondsupply member 520 with each other, and thus, the purge gas of the1st-3rd supply space 531 c can flow to the inside of the 1st-3rdinjection member 310 c.

The 1st-4th supply hole 371 d communicates the inside of the 1st-4thinjection member 310 d and a 1st-4th supply space 531 d of the secondsupply member 520 with each other, and thus, the purge gas of the1st-4th supply space 531 d can flow to the inside of the 1st-4thinjection member 310 d.

The 2nd-3rd supply hole 372 c communicates the inside of the 2nd-3rdinjection member 320 c and a 2nd-3rd supply space 532 c of the secondsupply member 520 with each other, and thus, the purge gas of the2nd-3rd supply space 532 c can flow to the inside of the 2nd-3rdinjection member 320 c.

The 2nd-4th supply hole 372 d communicates the inside of the 2nd-4thinjection member 320 d and a 2nd-4th supply space 532 d of the secondsupply member 520 with each other, and thus, the purge gas of the2nd-4th supply space 532 d can flow to the inside of the 2nd-4thinjection member 320 d.

The 3rd-3rd supply hole 373 c communicates the inside of the 3rd-3rdinjection member 330 c and a 3rd-3rd supply space 533 c of the secondsupply member 520 with each other, and thus, the purge gas of the3rd-3rd supply space 533 c can flow to the inside of the 3rd-3rdinjection member 330 c.

The 3rd-4th supply hole 373 d communicates the inside of the 3rd-4thinjection member 330 d and a 3rd-4th supply space 533 d of the secondsupply member 520 with each other, and thus, the purge gas of the3rd-4th supply space 533 d can flow to the inside of the 3rd-4thinjection member 330 d.

The above described 1st-1st to 3rd-4th supply holes 371 a to 373 d arepreferably formed in a slit shape having a vertical length longer than ahorizontal length.

Further, it is preferable that the 1st-1st to 3rd-4th supply holes 371 ato 373 d have horizontal lengths shorter than horizontal lengths of the1st-1st to 3rd-4th supply spaces 531 a to 533 d of the first and secondsupply members communicating with the 1st-1st to 3rd-4th supply holes371 a to 373 d, respectively.

When the purge gas flows from the 1st-1st to 3rd-4th supply spaces 531 ato 533 d to the 1st-1st to 3rd-4th supply holes 371 a to 373 d, thepurge gas flows from the 1st-1st to 3rd-4th supply spaces 531 a to 533 dhaving larger widths, to the 1st-1st to 3rd-4th supply holes 371 a to373 d having small widths, whereby the injection pressure of the purgegas can be instantaneously increased.

As such, when the injection pressure of the purge gas is instantaneouslyincreased, the purge gas can easily flow to into the entire interior ofthe 1st-1st to 3rd-4th injection members 310 a to 330 d, and as aresult, the purge gas injected from the 1st-1st to 3rd-4th injectionmembers 310 a to 330 d can be more easily injected into the entire ofthe first to third purging areas 210, 220, and 230.

First to Eighth Horizontal Members 111 to 118 and First to SixthVertical Members 121 to 126

Hereinbelow, reference will be made to the first to eighth horizontalmembers 111 to 118 and the first to sixth vertical members 121 to 126.

As shown in FIGS. 2 and 6, the first to fourth horizontal members 111 to114 and the first to third vertical members 121 to 123 are disposed onthe left side of the storage chamber 200.

The first to fourth horizontal members 111 to 114 are connected by thefirst to third vertical members 121 to 123, and due to this connectionstructure, the first to fourth horizontal members 111 to 114 and thefirst to third vertical members 121 to 123 form the framework, that is,the frame of the 1st-1st to 3rd-2nd injection members 310 a to 330 b.

In this case, each of the first to fourth horizontal members 111 to 114and the first to third vertical members 121 to 123 may have apredetermined width, and the width is equal to the width of the gapbetween the first injection member inner wall surface 340 and the firstinjection member outer wall surface 361. Accordingly, the width of theinternal space of the 1st-1st to 3rd-2nd injection members 310 a to 330b may be defined by the width.

As shown in FIGS. 2 and 10, the fifth to eighth horizontal members 115to 118 and the fourth to sixth vertical members 124 to 126 are disposedon the right side of the storage chamber 200.

The fifth to eighth horizontal members 115 to 118 are connected by thefourth to sixth vertical members 124 to 126, and due to this connectionstructure, the fifth to eighth horizontal members 115 to 118 and thefourth to sixth vertical members 124 to 126 form the framework, that is,the frame of the 1st-3rd to 3rd-4th injection members 310 c to 330 d.

In this case, each of the fifth to eighth horizontal members 115 to 118and the fourth to sixth vertical members 124 to 126 may have apredetermined width, and the width is equal to the width of the gapbetween the second injection member inner wall surface 350 and thesecond injection member outer wall surface 362. Accordingly, the widthof the internal space of the 1st-3rd to 3rd-4th injection members 310 cto 330 d may be defined by the width.

Exhaust Member 400

Hereinbelow, reference will be made to the exhaust member 400.

As shown in FIGS. 2 to 14, the exhaust member 400 is disposed betweenthe 1st-2nd to 3rd-2nd injection members 310 b, 320 b, and 330 b, andthe 1st-4th to 3rd-4th injection members 310 d, 320 d, and 330 d.Accordingly, the exhaust member functions to exhaust the purge gasinjected into the storage chamber 200 by the first to third injectionmembers 310, 320, and 330, and the fumes of the wafer W toward the backof the storage chamber 200.

As shown in FIGS. 5, 6, 10, 11, and 17, the inner surface of the exhaustmember 400 is constituted by the exhaust member inner wall surface 440.

In this case, the exhaust member inner wall surface 440 is providedbetween the storage chamber 200 and the exhaust member 400.

Accordingly, the exhaust member inner wall surface 440 constitutes theinner surface of the exhaust member 400 and constitutes the outersurface (or the circumferential surface) of the storage chamber 200,simultaneously. In other words, the exhaust member 400 is contact withthe back of the storage chamber 200 of the exhaust member inner wallsurface 440.

The exhaust member inner wall surface 440 is formed with a plurality ofexhaust holes 490, and as described above, since the container 10 forstoring a wafer according to the preferred embodiment of the presentinvention accommodates 30 wafers W and purges the same, it is preferablethat the exhaust member inner wall surface 440 is formed with 30 exhaustholes 490.

In this case, the 30 exhaust holes 490 are arranged in the verticaldirection, and each of the exhaust holes 490 is preferably positioned tohave the same height as the row of injection holes 390 described above.In other words, as in the injection holes 390, it is preferable that theexhaust holes 490 are disposed above the 30 supports 600, respectively.

As shown in FIGS. 17 and 18, the exhaust member 400 may include: firstto third exhaust spaces 410, 420, and 430 communicating with the exhaustholes 490; and first to third vertical exhaust paths 411, 421, and 431communicating with the first to third exhaust spaces 410, 420, and 430,respectively.

The first to third exhaust spaces 410, 420, and 430 are arranged suchthat the first exhaust space 410, the second exhaust space 420, and thethird exhaust space 430 are disposed on top of each other in the orderfrom bottom to top inside the exhaust member 400, so as to respectivelycorrespond to the first to third purging areas 210, 220, and 230vertically divided within the storage chamber 200.

Accordingly, the purge gas injected into the first purging area 210 andthe fumes of the wafer W are exhausted through the exhaust holes 490communicating with the first exhaust space 410, the purge gas injectedinto the second purging area 220 and the fumes of the wafer W areexhausted through the exhaust holes 490 communicating with the secondexhaust space 420, and the purge gas injected into the third purgingarea 230 and the fumes of the wafer W are exhausted through the exhaustholes 490 communicating with the third exhaust space 430.

In this case, the number of the exhaust holes 490 communicating with thefirst exhaust space 410 is 10, the number of the exhaust holes 490communicating with the second exhaust space 420 is 10, and the number ofthe exhaust holes 490 communicating with the third exhaust space 430 is10.

Accordingly, the fumes of the 10 wafer W accommodated in the firstpurging area 210 can be exhausted to the first exhaust space 410 alongwith the purge gas, the fumes of the 10 wafer W accommodated in thesecond purging area 220 can be exhausted to the second exhaust space 420along with the purge gas, and the fumes of the 10 wafer W accommodatedin the third purging area 230 can be exhausted to the third exhaustspace 430 along with the purge gas.

The first vertical exhaust path 411 vertically extends within theexhaust member 400, and is configured such that a first end thereofcommunicates with the first exhaust space 410, and a second end thereofcommunicates with a first exhaust communication hole 815 a of a firstbottom plate 810 to be described later. Accordingly, the first verticalexhaust path 411 serves as a path for flowing the purge gas exhausted tothe first exhaust space 410 to the first exhaust communication hole 815a.

The second vertical exhaust path 421 vertically extends within theexhaust member 400, and is configured such that a first end thereofcommunicates with the second exhaust space 420, and a second end thereofcommunicates with a second exhaust communication hole 815 b of the firstbottom plate 810 to be described later. Accordingly, the second verticalexhaust path 421 serves as a path for flowing the purge gas exhausted tothe second exhaust space 420 to the second exhaust communication hole815 b.

The third vertical exhaust path 431 vertically extends within theexhaust member 400, and is configured such that a first end thereofcommunicates with the third exhaust space 430, and a second end thereofcommunicates with a third exhaust communication hole 815 c of the firstbottom plate 810 to be described later. Accordingly, the third verticalexhaust path 431 serves as a path for flowing the purge gas exhausted tothe third exhaust space 430 to the third exhaust communication hole 815c.

As such, as the exhaust holes 490 are formed in the exhaust member innerwall surface 440 of the exhaust member 400 constituting thecircumferential surface of the storage chamber 200 such that the purgegas and the fumes of the wafer W are exhausted through the exhaust holes490, maintenance of the container 10 for storing a wafer is easy. Inother words, when the exhaust holes 490 are contaminated and clogged bythe fumes, the problems caused by clogging of the exhaust holes 490 canbe easily solved only by replacing the exhaust member inner wall surface440.

Further, unlike the above described embodiment, more than 30 exhaustholes 490 may be formed in the exhaust member inner wall surface 440 inthe vertical direction. In other words, two or more exhaust holes 490may be formed between neighboring supports 600 in the vertical directioninstead one exhaust hole 490 formed therebetween. Accordingly, at onepurging area, more than 10 exhaust holes 490 may be formed, and thus,the exhaust of the fumes generated after the purging of the wafer W canbe achieved more easily.

Further, the exhaust holes 490 may be formed to have various shapes suchas a rectangular slit shape, a slit shape having an arc at an end, anannular hole shape, a polygonal hole shape, or the like.

Supply Member

Hereinbelow, reference will be made to the supply member.

As shown in FIGS. 2, 5, 6, 10, 11, and 15, the supply member mayinclude: the first supply member 510 provided on the outer side of the1st-1st to 3rd-2nd injection members 310 a to 330 b and disposed on theleft side based on the storage chamber 200; and the second supply member520 provided on the outer side of the 1st-3rd to 3rd-4th injectionmembers 310 c to 330 d and disposed on the right side based on thestorage chamber 200.

The first supply member 510 serves to supply the purge gas introducedthrough the bottom plate 800 to the 1st-1st to 3rd-2nd injection members310 a to 330 b, and the second supply member 520 serves to supply thepurge gas introduced through the bottom plate 800 to the 1st-3rd to3rd-4th injection members 310 c to 330 d.

As shown in FIG. 19, the first supply member 510 is provided with1st-1st to 3rd-2nd supply spaces 531 a to 533 b respectivelycommunicating with the 1st-1st to 3rd-2nd supply holes 371 a to 373 b,and 1st-1st to 3rd-2nd vertical supply paths 541 a to 543 b respectivelycommunicating with the 1st-1st to 3rd-2nd supply spaces 531 a to 533 b.

The 1st-1st to 3rd-2nd supply spaces 531 a to 533 b are the spaces wherethe purge gas is stored and is supplied to the 1st-1st to 3rd-2ndinjection members 310 a to 330 b through the 1st-1st to 3rd-2nd supplyholes 371 a to 373 b, and are formed by opening the right side surfaceof the first supply member 510.

The 1st-1st to 3rd-1st supply spaces 531 a, 532 a, and 533 a are formedon the front side with respect to the center line (C1 in FIG. 19) of thefirst supply member 510, and the 1st-2nd to 3rd-2nd supply spaces 531 b,532 b, and 533 b are formed on the rear side with respect to the centerline (C1 in FIG. 19) of the first supply member 510. In other words, the1st-1st to 3rd-1st supply spaces 531 a, 532 a, and 533 a, and the1st-2nd to 3rd-2nd supply spaces 531 b, 532 b, and 533 b are disposedsymmetrically with respect to the center line (C1 in FIG. 19) of thefirst supply member 510.

In order for the 1st-1st to 3rd-2nd supply spaces 531 a to 533 b tocorrespond to the 1st-1st to 3rd-2nd supply holes 371 a to 373 brespectively, the 1st-1st supply space 531 a and the 1st-2nd supplyspace 531 b, the 2nd-1st supply space 532 a and the 2nd-2nd supply space532 b, and the 3rd-1st supply space 533 a and the 3rd-2nd supply space533 b are sequentially arranged in the order from the bottom to the topof the first supply member 510.

Further, the size of the supply space is gradually increased in theorder of the 1st-1st supply space 531 a and the 1st-2nd supply space 531b, the 2nd-1st supply space 532 a and the 2nd-2nd supply space 532 b,and the 3rd-1st supply space 533 a and the 3rd-2nd supply space 533 b.

As such, as the size of the supply space is gradually increased towardthe upper portion of the first supply member 510, the flow rate of thepurge gas flowing into the 3rd-1st supply space 533 a and the 3rd-2ndsupply space 533 b is increased, and thus, a sufficient amount of purgegas can be supplied to the 3rd-1st injection member 330 a and the3rd-2nd injection member 330 b.

Accordingly, the 3rd-1st injection member 330 a and the 3rd-2ndinjection member 330 b can inject a sufficient amount of purge gas intothe third purging area 230, and it is possible to easily achieve thepurging of the wafer W at the third purging area 230 formed at the upperportion of the storage chamber 200.

The 1st-1st to 3rd-2nd vertical supply paths 541 a to 543 b verticallyextend within the first supply member 510, the first ends thereofcommunicate with the 1st-1st to 3rd-2nd supply spaces 531 a to 533 b,respectively, and the second ends thereof communicate with 1st-1st to3rd-2nd supply communication holes 811 a to 813 b formed in the firstbottom plate 810, respectively. Accordingly, the 1st-1st to 3rd-2ndvertical supply paths 541 a to 543 b serve as paths for flowing thepurge gas introduced from the 1st-1st to 3rd-2nd supply communicationholes 811 a to 813 b to the 1st-1st to 3rd-2nd supply spaces 531 a to533 b.

In this case, each second end of the 1st-1st to 3rd-2nd vertical supplypaths 541 a to 543 b may be formed in a hole shape opened on the lowersurface of the first supply member, thereby easily communicating withthe 1st-1st to 3rd-2nd supply communication holes 811 a to 813 b.

As shown in FIG. 20, the second supply member 520 is provided with1st-3rd to 3rd-4th supply spaces 531 c to 533 d respectivelycommunicating with the 1st-3rd to 3rd-4th supply holes 371 c to 373 d,and 1st-3rd to 3rd-4th vertical supply paths 541 c to 543 d respectivelycommunicating with the 1st-3rd to 3rd-4th supply spaces 531 c to 533 d.

The 1st-3rd to 3rd-4th supply spaces 531 c to 533 d are the spaces wherethe purge gas is stored and is supplied to the 1st-3rd to 3rd-4thinjection members 310 c to 330 d through the 1st-3rd to 3rd-4th supplyholes 371 c to 373 d, and are formed by opening the left side surface ofthe second supply member 520.

The 1st-3rd to 3rd-3rd supply spaces 531 c, 532 c, and 533 c are formedon the front side with respect to the center line (C2 in FIG. 20) of thesecond supply member 520, and the 1st-4th to 3rd-4th supply spaces 531d, 532 d, and 533 d are formed on the rear side with respect to thecenter line (C2 in FIG. 20) of the second supply member 520. In otherwords, the 1st-3rd to 3rd-3rd supply spaces 531 c, 532 c, and 533 c, andthe 1st-4th to 3rd-4th supply spaces 531 d, 532 d, and 533 d aredisposed symmetrically with respect to the center line (C2 in FIG. 20)of the second supply member 520.

In order for the 1st-3rd to 3rd-4th supply spaces 531 c to 533 d tocorrespond to the 1st-3rd to 3rd-4th supply holes 371 c to 373 drespectively, the 1st-3rd supply space 531 c and the 1st-4th supplyspace 531 d, the 2nd-3rd supply space 532 c and the 2nd-4th supply space532 d, and the 3rd-3rd supply space 533 c and the 3rd-4th supply space533 d are sequentially arranged in the order from the bottom to the topof the second supply member 520.

Further, the size of the supply space is gradually increased in theorder of the 1st-3rd supply space 531 c and the 1st-4th supply space 531d, the 2nd-3rd supply space 532 c and the 2nd-4th supply space 532 d,and the 3rd-3rd supply space 533 c and the 3rd-4th supply space 533 d.

As such, as the size of the supply space is gradually increased towardthe upper portion of the second supply member 520, the flow rate of thepurge gas flowing into the 3rd-3rd supply space 533 c and the 3rd-4thsupply space 533 d is increased, and thus, a sufficient amount of purgegas can be supplied to the 3rd-3rd injection member 330 c and the3rd-4th injection member 330 d.

Accordingly, the 3rd-3rd injection member 330 c and the 3rd-4thinjection member 330 d can inject a sufficient amount of purge gas intothe third purging area 230, and it is possible to easily achieve thepurging of the wafer W at the third purging area 230 formed at the upperportion of the storage chamber 200.

The 1st-3rd to 3rd-4th vertical supply paths 541 c to 543 d verticallyextend within the second supply member 520, the first ends thereofcommunicate with the 1st-3rd to 3rd-4th supply spaces 531 c to 533 d,respectively, and the second ends thereof communicate with 1st-3rd to3rd-4th supply communication holes 811 c to 813 d formed in the firstbottom plate 810. Accordingly, the 1st-3rd to 3rd-4th vertical supplypaths 541 c to 543 d serve as paths for flowing the purge gas introducedfrom the 1st-3rd to 3rd-4th supply communication holes 811 c to 813 d tothe 1st-3rd to 3rd-4th supply spaces 531 c to 533 d.

In this case, each second end of the 1st-3rd to 3rd-4th vertical supplypaths 541 c to 543 d may be formed in a hole shape opened on the lowersurface of the second supply member 520, thereby easily communicatingwith the 1st-3rd to 3rd-4th supply communication holes 811 c to 813 d.

Due to the above described configuration of the first supply member 510and the second supply member 520, it is possible to easily supply thepurge gas introduced from the bottom plate 800 to the 1st-1st to 3rd-4thinjection members 310 a to 330 d.

As described above, the container 10 for storing a wafer according tothe preferred embodiment of the present invention is configured suchthat the first supply member 510 is disposed on the outer side of the1st-1st to 3rd-2nd injection members 310 a to 330 b and supplies thepurge gas into the 1st-1st to 3rd-2nd injection members 310 a to 330 b,and the second supply member 520 is disposed on the outer side of the1st-3rd to 3rd-4th injection members 310 c to 330 d and supplies thepurge gas into the 1st-3rd to 3rd-4th injection members 310 c to 330 d.

Accordingly, with only two supply members, the supply of purge gas into12 injection members can be achieved, and thus, the compact structure ofthe container 10 for storing a wafer can be achieved.

Support 600

Hereinbelow, reference will be made to the support 600.

As shown in FIGS. 1 to 3, the support 600 serves to support the wafer Wstored in the storage chamber 200, and may be provided in plural in thevertical direction within the storage chamber 200. In this case, as thecontainer 10 for storing a wafer according to the preferred embodimentof the present invention purges 30 wafers W, 30 supports 600 areprovided.

As shown in FIGS. 21 and 22, the support 600 includes: a rear supportpart 610; a left support part 620 extending from the left side of therear support part 610 in the forward direction; and a right support part630 extending from the right side of the rear support part 610 in theforward direction.

The rear support part 610 functions to support the rear side of thewafer W, and the rear support part 610 is provided with a rear arcportion 611.

The rear arc portion 611 is stepped downwardly from the upper surface ofthe rear support part 610, and has an arc shape.

In this case, the rear arc portion 611 has an arc shape having acurvature equal to the curvature of the wafer W, and thus, when the reararc portion 611, a left arc portion 621, and a right arc portion 631 areconnected by an imaginary line, a circular shape same as the wafer W isformed.

The rear arc portion 611 is provided with a rear protrusion 612, and therear protrusion 612 functions to support the rear lower surface of thewafer W.

The left support part 620 is formed by extending from the left side ofthe rear support part 610 in the forward direction, and functions tosupport the left side of the wafer W. Further, the left support part 620is provided with the left arc portion 621.

The left arc portion 621 is stepped downwardly from the upper surface ofthe left support part 620, and has an arc shape.

In this case, the left arc portion 621 has an arc shape having acurvature equal to the curvature of the wafer W, and thus, when the reararc portion 611, the left arc portion 621, and the right arc portion 631are connected by an imaginary line, a circular shape same as the wafer Wis formed.

The left arc portion 621 is provided with a left protrusion 622, and therear protrusion 612 functions to support the right lower surface of thewafer W.

The right support part 630 is formed by extending from the left side ofthe right support part 630 in the forward direction, and functions tosupport the right side of the wafer W. Further, the right support part630 is provided with the right arc portion 631.

The right arc portion 631 is stepped downwardly from the upper surfaceof the right support part 630, and has an arc shape.

In this case, the right arc portion 631 has an arc shape having acurvature equal to the curvature of the wafer W, and thus, when the reararc portion 611, the left arc portion 621, and the right arc portion 631are connected by an imaginary line, a circular shape same as the wafer Wis formed.

The right arc portion 631 is provided with a right protrusion 632, andthe rear protrusion 612 functions to support the left lower surface ofthe wafer W.

As such, as the rear protrusion 612, the left protrusion 622, and theright protrusion 632 support rear, left, and right lower surfaces of thewafer W, respectively, the wafer W is supported at three points. Thus,the contact area of the wafer W can be minimized by supporting the waferW at three points by the three protrusions, thereby preventing the waferW from being damaged due to the contact of the wafer W.

A left inclined portion 640 may be formed on an outer surface of aportion where the rear support part 610 and the left support part 620extend.

The left inclined portion 640 is formed to be gradually inclinedoutwardly from the rear toward the front.

A right inclined portion 650 may be formed on an outer surface of aportion where the rear support part 610 and the right support part 630extend.

The right inclined portion 650 is also formed to be gradually inclinedoutwardly from the rear toward the front.

The left and right inclined portions 640 and 650 relate to the compactstructure of the container 10 for storing a wafer.

In other words, the left and right sides of the container 10 for storinga wafer are formed with inclined portions similar to the left and rightinclined portions 640 and 650, and the left and right inclined portions640 and 650 are formed in the support 600 to correspond thereto.

These inclined portions function to minimize the area of the container10 for storing a wafer, which results in a compact structure of thecontainer 10 for storing a wafer.

A left concave portion 660 is formed on an inner surface of a portionwhere the rear support part 610 and the left support part 620 extend,and a right concave portion 670 is formed on an inner surface of aportion where the rear support part 610 and the right support part 630extend.

The left concave portion 660 is formed concavely in the backwarddirection between the rear arc portion 611 and the left arc portion 621.

The right concave portion 670 is formed concavely in the backwarddirection between the rear arc portion 611 and the right arc portion631.

These left and right concave portions 660 and 670 function to preventrobot arm fingers (not shown) from coming into contact with the support600, that is, the inner surface of the rear support part 610 when thewafer W is accommodated in the storage chamber 200 by a robot arm (notshown), and thus, the wafer W can be easily put in and taken out fromthe storage chamber 200 through the front opening 251 and be supportedon the support 600.

Due to the configuration and shape of the support 600 described above,as shown in FIG. 22, when the wafer W is supported on the support 600,the vertical flow of the purge gas inside the storage chamber 200 can beminimized.

To be more specific, when the wafer W is supported at three points bythe rear protrusion 612, the left protrusion 622 and the rightprotrusion 632 formed in the rear arc portion 611, the left arc portion621, and the right arc portion 631, respectively, the area except theleft and right concave portions 660 and 670 of the support 600 is closedby the wafer W. Accordingly, the support 600, by which the wafer W issupported, serves as a kind of partition in the vertical directionwithin the storage chamber 200, and thus, the vertical flow of the purgegas can be restricted.

Further, even though the areas where the left and right concave portions660 and 670 are formed on the support 600 are not closed by the wafer W,the purge gas is injected horizontally into the region where the leftand right concave portions 660 and 670 are positioned, so the verticalflow of the purge gas can be restricted by the purge gas injectedhorizontally.

To be more specific, the injection holes 390 of the 1st-2nd injectionmember 310 b, the 2nd-2nd injection member 320 b, and the 3rd-2ndinjection member 330 b inject the purge gas in the direction where theleft concave portion 660 is positioned. Further, the injection holes 390of the 1st-4th injection member 310 d, the 2nd-4th injection member 320d, and the 3rd-4th injection member 330 d inject the purge gas in thedirection where the right concave portion 670 is positioned.

As such, the injection holes 390 of the first to third injection members310, 320, and 330 inject the purge gas in the direction where the leftand right concave portions 660 are positioned, and in this case, theinjected purge gas is injected in the horizontal direction. Accordingly,the purge gas is injected forming a horizontal layer, and flows.

By the flowing purge gas forming a horizontal layer, it is possible toprevent the purge gas from vertically flowing through the left and rightconcave portions 660 and 670, thereby allowing the support 600 torestrict the vertical flow of the purge gas.

The restriction of the vertical flow of the purge gas by the support 600allows achieving the individual control of the first to third injectionmembers 310, 320, and 330 described later, more efficiently.

Further, to prevent the robot arm fingers from coming into contact withthe support 600, the above described support 600 is described based onthe fact that the left and right concave portions 660 and 670 areformed, but depending on the shape of robot arm fingers, the support 600may be formed without the left and right concave portions 660 and 670.Accordingly, when the wafer W is supported on the support 600, the innerspace of the support 600 (the space opened to support the wafer W) isclosed by the wafer W, and the above described restriction of thevertical flow of the purge gas can be more effectively achieved.

First Front Exhaust Member 710 and Second Front Exhaust Member 750

Hereinbelow, reference will be made to a first front exhaust member 710and a second front exhaust member 750.

As shown in FIGS. 1, 2, 5, 6, 10, and 11, first and second front exhaustmembers 710 and 750 are disposed on opposite sides of the front of thestorage chamber 200, respectively, and exhaust external gas, therebyfunctioning to block external gas from entering the storage chamber 200.

In this case, the external gas refers to all gases, including theoutside air.

The first front exhaust member 710 is provided at the front of the1st-1st to 3rd-1st injection members 310 a, 320 a, and 330 a to bedisposed on the front left side of the storage chamber 200.

As shown in FIGS. 23 and 24, the first front exhaust member 710includes: a first exhaust slit 720; fourth to sixth exhaust spaces 721a, 721 b, and 721 c communicating with the first exhaust slit 720; andfourth to sixth vertical exhaust paths 731 a, 731 b, and 731 ccommunicating with the fourth to sixth exhaust spaces 721 a, 721 b, and721 c, respectively.

The first exhaust slit 720 is formed by opening the right side surfaceof the first front exhaust member 710. In this case, the first exhaustslit 720 is formed in a slit shape having a vertical length longer thana horizontal length.

The fourth to sixth exhaust spaces 721 a, 721 b, and 721 c communicatewith the first exhaust slit 720, and are formed inside the first frontexhaust member 710 to correspond to the first to third purging areas210, 220, and 230. Accordingly, the fourth exhaust space 721 a, thefifth exhaust space 721 b, and the sixth exhaust space 721 c aresequentially arranged in the order from the bottom to the top of thefirst front exhaust member 710, and the height of each of the fourth tosixth exhaust spaces 721 a, 721 b, and 721 c is equal to the height ofeach of the first to third purging areas 210, 220, and 230.

The fourth to sixth vertical exhaust paths 731 a, 731 b, and 731 c areformed by vertically extending within the first front exhaust member710, wherein first ends thereof communicate with the fourth to sixthexhaust spaces 721 a, 721 b, and 721 c, respectively, and second endsthereof communicate with fourth to sixth exhaust communication holes 816a, 816 b, and 816 c of the first bottom plate 810, respectively.Accordingly, the fourth to sixth vertical exhaust paths 731 a, 731 b,and 731 c serve as paths for flowing the external gas exhausted throughthe fourth to sixth exhaust spaces 721 a, 721 b, and 721 c to the fourthto sixth exhaust communication holes 816 a, 816 b, and 816 c.

In this case, each of the second ends of the fourth to sixth verticalexhaust paths 731 a, 731 b, and 731 c may be formed in a hole shapeopened on the lower surface of the first front exhaust member 710,thereby easily communicating with the fourth to sixth exhaustcommunication holes 816 a, 816 b, and 816 c.

As shown in FIGS. 25 and 26, the second front exhaust member 750includes: a the second exhaust slit 760; seventh to ninth exhaust spaces761 a, 761 b, and 761 c communicating with the second exhaust slit 720;and seventh to ninth vertical exhaust paths 771 a, 771 b, and 771 ccommunicating with the seventh to ninth exhaust spaces 721 a, 721 b, and721 c, respectively.

The second exhaust slit 760 is formed by opening the left side surfaceof the second front exhaust member 750. In this case, the second exhaustslit 760 is formed in a slit shape having a vertical length longer thana horizontal length.

The seventh to ninth exhaust spaces 761 a, 761 b, and 761 c communicatewith the second exhaust slit 760, and are formed inside the second frontexhaust member 750 to correspond to the first to third purging areas210, 220, and 230. Accordingly, the seventh exhaust space 761 a, theeighth exhaust space 761 b, and the ninth exhaust space 761 c aresequentially arranged in the order from the bottom to the top of thesecond front exhaust member 750, and the height of each of the seventhto ninth exhaust spaces 761 a, 761 b, and 761 c is equal to the heightof each of the first to third purging areas 210, 220, and 230.

The seventh to ninth vertical exhaust paths 771 a, 771 b, and 771 c areformed by vertically extending within the second front exhaust member750, wherein first ends thereof communicate with the seventh to ninthexhaust spaces 761 a, 761 b, and 761 c, respectively, and second endsthereof communicate with seventh to ninth exhaust communication holes817 a, 817 b, and 817 c of the first bottom plate 810. Accordingly, theseventh to ninth vertical exhaust paths 771 a, 771 b, and 771 c serve aspaths for flowing the external gas exhausted through the seventh toninth exhaust spaces 761 a, 761 b, and 761 c to the seventh to ninthexhaust communication holes 817 a, 817 b, and 817 c.

In this case, each of the second ends of the seventh to ninth verticalexhaust paths 771 a, 771 b, and 771 c may be formed in a hole shapeopened on the lower surface of the second front exhaust member 750,thereby easily communicating with the seventh to ninth exhaustcommunication holes 817 a, 817 b, and 817 c.

By the above configuration, as shown in FIGS. 9, 14, and 16, the firstfront exhaust member 710 and the second front exhaust member 750 canexhaust the external gas through the first exhaust slit 720 and thesecond exhaust slit 760.

Accordingly, it is possible to prevent external gas from entering thestorage chamber 200 through the front opening 251, thereby preventingturbulence from occurring when the external gas is mixed with the purgegas injected into the storage chamber 200.

Further, as described above, the first exhaust slit 720 is formedthrough the right side surface of the first front exhaust member 710 soas to be open from the front of the storage chamber 200 to the right,and the second exhaust slit 760 is formed through the left side surfaceof the second front exhaust member 750 so as to be open from the frontof the storage chamber 200 to the right.

Accordingly, external gas can be easily exhausted in the left and rightdirections by the first and second front exhaust members 710 and 750,and thus, it is possible to prevent external gas from entering thestorage chamber 200 more efficiently.

Further, the first and second front exhaust members 710 and 750 canexhaust the purge gas in the first to third purging areas 210, 220, and230, as well as the external gas.

In other words, as shown in FIG. 16, of the purge gas injected from the1st-1st to 3rd-1st injection members 310 a, 320 a, and 330 a, and the1st-2nd to 3rd-2nd injection members 310 b, 320 b, and 330 b, the purgegas injected in the forward direction can be exhausted by the first andsecond front exhaust members 710 and 750.

As such, as the first and second front exhaust members 710 and 750exhaust some of the purge gas injected in the forward direction of thepurge gas injected from the 1st-1st to 3rd-1st injection members 310 a,320 a, and 330 a, and the 1st-2nd to 3rd-2nd injection members 310 b,320 b, and 330 b, the flow of the purge gas supplied from the first andsecond supply members 510 and 520 to the 1st-1st to 3rd-1st injectionmembers 310 a, 320 a, and 330 a, and the 1st-2nd to 3rd-2nd injectionmembers 310 b, 320 b, and 330 b is facilitated.

In other words, the flow of the purge gas supplied from the first andsecond supply members 510 and 520 to the 1st-1st to 3rd-1st injectionmembers 310 a, 320 a, and 330 a, and the 1st-2nd to 3rd-2nd injectionmembers 310 b, 320 b, and 330 b may be relatively weak due to the sizesof the 1st-1st to 3rd-1st injection members 310 a, 320 a, and 330 a, andthe 1st-2nd to 3rd-2nd injection members 310 b, 320 b, and 330 b.However, as described above, as the first and second front exhaustmembers 710 and 750 exhaust the purge gas injected from the 1st-1st to3rd-1st injection members 310 a, 320 a, and 330 a, and the 1st-2nd to3rd-2nd injection members 310 b, 320 b, and 330 b, the flow can besmoother.

Accordingly, by the organic connection between the first and secondfront exhaust members 710 and 750 and the first and second supplymembers 510 and 520, even if the first and second supply members 510 and520 are disposed rearward, the flow of the purge gas supplied from thefirst and second supply members 510 and 520 to the 1st-1st to 3rd-1stinjection members 310 a, 320 a, and 330 a, and the 1st-2nd to 3rd-2ndinjection members 310 b, 320 b, and 330 b can be smooth.

Further, according to the suction forces of the first and second frontexhaust members 710 and 750, the flow of purge gas flowing in thestorage chamber 200 can be controlled, and thus, it is possible toprevent the occurrence of dead zones where the fumes of the wafer W arenot removed.

In other words, when the suction forces of the first and second frontexhaust members 710 and 750 are increased, the purge gas flows from theinside of the storage chamber 200 to the outside of the storage chamber200, that is, from the rear to the front, and thus, the purge gas caneasily flow in the entire area of the wafer W. Accordingly, the removalof fumes of the entire area of the wafer W can be achieved more easily.

In the above, it is described that the fourth to sixth exhaust spaces721 a, 721 b, and 721 c communicate with one exhaust slit, that is, thefirst exhaust slit 720, but three slits may be formed to correspond tothe heights of the fourth to sixth exhaust spaces 721 a, 721 b, and 721c, respectively. Accordingly, in this case, the first front exhaustmember 710 may more easily achieve selective exhaust of external gasesat heights respectively corresponding to the first to third purgingareas 210, 220, and 230.

Of course, three slits may be formed to correspond to the heights of theseventh to ninth exhaust spaces 761 a, 761 b, and 761 c, respectively.Accordingly, in this case, the second front exhaust member 750 may moreeasily achieve selective exhaust of external gases at heightsrespectively corresponding to the first to third purging areas 210, 220,and 230.

Bottom Plate 800

Hereinbelow, reference will be made to the bottom plate 800.

As shown in FIGS. 1 to 3, as the bottom plate 800 constitutes the bottomsurface of the container 10 for storing a wafer, thereby closing thelower portion of the storage chamber 200, and functions to introduce thepurge gas supplied from the outside to the container 10 for storing awafer.

Further, as shown in FIG. 27, the bottom plate 800 may be formed bycoupling first to third bottom plates 810, 820, and 830 of the sameshape.

In this case, the second bottom plate 820 is coupled to the lowerportion of the first bottom plate 810, and the third bottom plate 830 iscoupled to the lower portion of the second bottom plate 820.

Further, the lower portion of the third bottom plate 830 is providedwith a connection member 850 where an external supply line (not shown)and an external exhaust line (not shown) are connected, and a standmember 860.

In this case, the stand member 860 is provided on the lower surface ofthe bottom plate 800, that is, front left and front right sides of thelower surface of the third bottom plate 830, and functions to keep thecontainer 10 for storing a wafer in a stable position when placed on aload port, etc.

First Bottom Plate 810

Hereinbelow, reference will be made to the first bottom plate 810.

As shown in FIG. 28, the first bottom plate 810 constitutes the bottomsurface of the storage chamber 200, and is provided with 1st-1st to3rd-4th supply communication holes 811 a to 813 d, and first to ninthexhaust communication holes 815 a, 815 b, 815 c, 816 a, 816 b, 816 c,817 a, 817 b, and 817 c formed through the upper and lower surfaces ofthe first bottom plate 810.

The 1st-1st to 3rd-1st supply communication holes 811 a, 812 a, and 813a and the 1st-2nd to 3rd-2nd supply communication holes 811 b, 812 b,and 813 b are formed on the rear left side of the first bottom plate 810so as to correspond to the first supply member 510 disposed on the uppersurface of the first bottom plate 810.

The first ends of the 1st-1st to 3rd-1st supply communication holes 811a, 812 a, and 813 a and the 1st-2nd to 3rd-2nd supply communicationholes 811 b, 812 b, and 813 b respectively communicate with the 1st-1stto 3rd-1st supply communication holes 811 a, 812 a, and 813 a and the1st-2nd to 3rd-2nd supply communication holes 811 b, 812 b, and 813 b ofthe first supply member 510, and the second ends thereof respectivelycommunicate with the 1st-1st to 3rd-1st supply flow paths 821 a, 822 a,and 823 a and the 1st-2nd to 3rd-2nd supply flow paths 821 b, 822 b, and823 b of the second bottom plate 820.

The 1st-3rd to 3rd-3rd supply communication holes 811 c, 812 c, and 813c, and the 1st-4th to 3rd-4th supply communication holes 811 d, 812 d,and 813 d are formed on the rear right side of the first bottom plate810 so as to correspond to the second supply member 520 disposed on theupper surface of the first bottom plate 810.

The first ends of the 1st-3rd to 3rd-3rd supply communication holes 811c, 812 c, and 813 c and the 1st-4th to 3rd-4th supply communicationholes 811 d, 812 d, and 813 d respectively communicate with the 1st-3rdto 3rd-3rd supply communication holes 811 c, 812 c, and 813 c and the1st-4th to 3rd-4th supply communication holes 811 d, 812 d, and 813 d ofthe second supply member 520, and the second ends thereof respectivelycommunicate with 1st-3rd to 3rd-3rd supply flow paths 821 c, 822 c, and823 c and 1st-4th to 3rd-4th supply flow paths 821 d, 822 d, and 823 dof the second bottom plate 820.

The first to third exhaust communication holes 815 a, 815 b, and 815 care formed at the rear of the first bottom plate 810 so as to correspondto the exhaust member 400 disposed on the upper surface of the firstbottom plate 810.

The first ends of the first to third exhaust communication holes 815 a,815 b, and 815 c respectively communicate with the first to thirdvertical exhaust paths 411, 421, and 431 of the exhaust member 400, andthe second ends thereof communicate with a first rear discharge hole 825of the second bottom plate 820.

The fourth to sixth exhaust communication holes 816 a, 816 b, and 816 care formed on the front left side of the first bottom plate 810 so as tocorrespond to the first front exhaust member 710 disposed on the uppersurface of the first bottom plate 810.

The first ends of the fourth to sixth exhaust communication holes 816 a,816 b, and 816 c respectively communicate with the fourth to sixthvertical exhaust paths 731 a, 731 b, and 731 c of the first frontexhaust member 710, and the second ends thereof respectively communicatewith the fourth to sixth exhaust flow paths 826 a, 826 b, and 826 c ofthe second bottom plate 820.

The seventh to ninth exhaust communication holes 817 a, 817 b, and 817 care formed on the front right side of the first bottom plate 810 so asto correspond to the second front exhaust member 750 disposed on theupper surface of the first bottom plate 810.

The first ends of the seventh to ninth exhaust communication holes 817a, 817 b, and 817 c respectively communicate with the seventh to ninthvertical exhaust paths 771 a, 771 b, and 771 c of the second frontexhaust member 750, and the second ends thereof respectively communicatewith the seventh to ninth exhaust flow paths 827 a, 827 b, and 827 c ofthe second bottom plate 820.

Second Bottom Plate 820

Hereinbelow, reference will be made to the second bottom plate 820.

As shown in FIG. 29, the second bottom plate 820 is coupled to the lowerportion of the first bottom plate 810, and is provided with 1st-1st to3rd-4th supply flow paths 821 a to 823 d, the first rear discharge hole825, and fourth to ninth exhaust flow paths 826 a, 826 b, 826 c, 827 a,827 b, and 827 c formed through the upper and lower surfaces of thesecond bottom plate 820.

The 1st-1st to 3rd-2nd supply flow paths 821 a to 823 b are formed toextend from the rear left side of the second bottom plate 820 toward therear center.

The first ends of the 1st-1st to 3rd-2nd supply flow paths 821 a to 823b respectively communicate with the 1st-1st to 3rd-2nd supplycommunication holes 811 a to 813 b of the first bottom plate 810, andthe second ends thereof respectively communicate with 1st-1st to 3rd-2ndinlet holes 831 a to 833 b of the third bottom plate 830.

The 1st-3rd to 3rd-4th supply flow paths 821 c to 823 d are formed toextend from the rear right side of the second bottom plate 820 towardthe rear center.

The first ends of the 1st-3rd to 3rd-4th supply flow paths 821 c to 823d respectively communicate with the 1st-3rd to 3rd-4th supplycommunication holes 811 c to 813 d of the first bottom plate 810, andthe second ends thereof respectively communicate with 1st-3rd to 3rd-4thinlet holes 831 c to 833 d of the third bottom plate 830.

It is preferable that the lengths of the 1st-1st to 3rd-4th supply flowpaths 821 a to 823 d are configured such that the 2nd-1st to 2nd-4thsupply flow paths 822 a to 822 d are shorter than the 1st-1st to 1st-4thsupply flow paths 821 a to 821 d, and the 3rd-1st to 3rd-4th supply flowpaths 823 a to 823 d are shorter than the 2nd-1st to 2nd-4th supply flowpaths 822 a to 822 d.

As such, as the length of the supply flow path for supplying purge gasto the third injection member 330 is formed to be shorter than thelength of the supply flow path for supplying purge gas to the firstinjection member 310 and the second injection member 320, a sufficientamount of purge gas can be injected into the third purging area 230formed at the upper portion of the storage chamber 200.

As such, by adjusting the length of supply flow path, a sufficientamount of purge gas can be supplied to the injection member disposed atthe upper portion, and thus, a uniform amount of purge gas can beinjected into each of the first to third purging areas 210, 220, and230.

The first rear discharge hole 825 is formed at the rear of the secondbottom plate 820.

The first rear discharge hole 825 is configured such that an upperportion thereof communicates with the first to third exhaustcommunication holes 815 a, 815 b, and 815 c of the first bottom plate810, and a lower portion thereof communicates with a second rear exhausthole 490 of the third bottom plate 830.

The fourth to sixth exhaust flow paths 826 a, 826 b, and 826 c areformed to extend from the front left side of the second bottom plate 820toward the front center.

The first ends of the fourth to sixth exhaust flow paths 826 a, 826 b,and 826 c respectively communicate with the fourth to sixth exhaustcommunication holes 816 a, 816 b, and 816 c of the first bottom plate810, and the second ends thereof respectively communicate with fourth tosixth discharge holes 836 a, 836 b, and 836 c of the third bottom plate830.

The seventh to ninth exhaust flow paths 827 a, 827 b, and 827 c areformed to extend from the front right side of the second bottom plate820 toward the front center.

The first ends of the seventh to ninth exhaust flow paths 827 a, 827 b,and 827 c respectively communicate with the seventh to ninth exhaustcommunication holes 817 a, 817 b, and 817 c of the first bottom plate810, and the second ends thereof respectively communicate with seventhto ninth discharge holes 837 a, 837 b, and 837 c of the third bottomplate 830.

It is preferable that the lengths of the fourth to ninth exhaust flowpaths 826 a, 826 b, 826 c, 827 a, 827 b, and 827 c are configured suchthat the fifth exhaust flow path 826 b and the eighth exhaust flow path827 b are formed to be shorter than the fourth exhaust flow path 826 aand the seventh exhaust flow path 827 a, and the sixth exhaust flow path826 c and the ninth exhaust flow path 827 c are formed to be shorterthan the fifth exhaust flow path 826 b and the eighth exhaust flow path827 b.

As such, as the length of the exhaust flow path for exhausting externalgas through the sixth exhaust space 721 c of the first front exhaustmember 710 and the ninth exhaust space 761 c of the second front exhaustmember 750 is formed to be shorter than the length of the exhaust flowpath for exhausting external gas through the fourth exhaust space 721 a,fifth exhaust space 721 b of the first front exhaust member 710 and theseventh exhaust space 761 a, eighth exhaust space 761 b of the secondfront exhaust member 750, the exhaust resistances of the first andsecond front exhaust members 710 and 750 can be made equal to eachother.

To be more specific, based on the first front exhaust member 710, whenthe length of the flow path is defined as “fourth vertical exhaust path731 a+fourth exhaust flow path 826 a=fifth vertical exhaust path 731b+the fifth exhaust flow path 826 b=sixth vertical exhaust path 731c+the sixth exhaust flow path 826 c”, the exhaust resistances of thefourth to sixth exhaust spaces 721 a, 721 b, and 721 c of the firstfront exhaust member 710 can be formed to be equal to each other,whereby it is possible to achieve uniform exhaust to the fourth to sixthexhaust spaces 721 a, 721 b, and 721 c.

Further, based on the second front exhaust member 750, when the lengthof the flow path is defined as “seventh vertical exhaust path 771 a+theseventh exhaust flow path 827 a=eighth vertical exhaust path 771 b+theeighth exhaust flow path 827 b=ninth vertical exhaust path 771 c+theninth exhaust flow path 827 c”, the exhaust resistances of the seventhto ninth exhaust spaces 761 a, 761 b, and 761 c of the second frontexhaust member 750 can be formed to be equal to each other, whereby itis possible to achieve uniform exhaust to the seventh to ninth exhaustspaces 761 a, 761 b, and 761 c.

Third Bottom Plate 830

Hereinbelow, reference will be made to the third bottom plate 830.

As shown in FIG. 30, the third bottom plate 830 is coupled to the lowerportion of the second bottom plate 820, and is provided with 1st-1st to3rd-4th inlet holes 831 a to 833 d, a second rear discharge hole 835,and fourth to ninth discharge holes 836 a, 836 b, 836 c, 837 a, 837 b,and 837 c formed through the upper and lower surfaces of the thirdbottom plate 830.

The 1st-1st to 3rd-1st inlet holes 831 a, 832 a, and 833 a and the1st-2nd to 3rd-2nd inlet holes 831 b, 832 b, and 833 b are formed at therear center of the third bottom plate 830 to be arranged in thefront-to-back direction.

The 1st-3rd to 3rd-3rd inlet holes 831 c, 832 c, and 833 c and the1st-4th to 3rd-4th inlet holes 831 d, 832 d, and 833 d are arranged atthe rear center of the third bottom plate 830 in the front-to-backdirection to be symmetrical with the 1st-1st to 3rd-1st inlet holes 831a, 832 a, and 833 a and the 1st-2nd to 3rd-2nd inlet holes 831 b, 832 b,and 833 b with respect to the center line of the third bottom plate 830.

The upper portions of the 1st-1st to 3rd-4th inlet holes 831 a to 833 drespectively communicate with the 1st-1st to 3rd-4th supply flow paths821 a to 823 d of the second bottom plate 820.

The 1st-1st and 1st-3rd inlet holes 831 a and 831 c communicate with a1st-1st main inlet hole 851 a of the connection member 850, the 2nd-1stand 2nd-3rd inlet holes 832 a and 832 c communicate with a 2nd-1st maininlet hole 852 a of the connection member 850, and the 3rd-1st and3rd-3rd inlet holes 833 a and 833 c communicate with a 3rd-1st maininlet hole 853 a of the connection member 850.

The 1st-2nd and 1st-4th inlet holes 831 b and 831 d communicate with a1st-2nd main inlet hole 851 b of the connection member 850, the 2nd-2ndand 2nd-4th inlet holes 832 b and 832 d communicate with a 2nd-2nd maininlet hole 852 b of the connection member 850, and the 3rd-2nd and3rd-4th inlet holes 833 b and 833 d communicate with a 3rd-2nd maininlet hole 853 b of the connection member 850.

The second rear discharge hole 835 is formed at the rear of the thirdbottom plate 830 through the upper and lower surfaces of the secondbottom plate 820 so as to communicate with the first rear discharge hole825 of the second bottom plate 820.

The second rear discharge hole 835 is configured such that a first endthereof communicates with the first rear discharge hole 825, and asecond end thereof communicates with an integrated exhaust path 855 ofthe connection member 850.

The fourth to ninth discharge holes 836 a, 836 b, 836 c, 837 a, 837 b,and 837 c are formed through the upper and lower surfaces of the secondbottom plate 820 at the center of the second bottom plate 820 so as tobe positioned ahead of the 1st-1st to 3rd-4th inlet holes 831 a to 833d.

The first ends of the fourth to ninth discharge holes 836 a, 836 b, 836c, 837 a, 837 b, and 837 c respectively communicate with the fourth toninth exhaust flow paths 826 a, 826 b, 826 c, 827 a, 827 b, and 827 c ofthe second bottom plate 820, and the second ends thereof communicatewith the integrated exhaust path 855 of the connection member 850.

As described above, as the first to third bottom plates 810, 820, and830 are respectively provided with supply/exhaust communication holes,supply/exhaust flow paths, and the like, even if the flow path insidethe bottom plate 800 has a complicated shape, it can be easily formed.

Further, when the container 10 for storing a wafer is connected with anexternal supply/exhaust line by being coupled to a load port or thelike, by appropriately forming the above supply/exhaust communicationholes, supply/exhaust flow paths, and the like of the first to thirdbottom plates 810, 820, and 830, it is possible to simplify the supplylines that supply purge gas and the exhaust lines that exhaust the purgegas and the fumes.

Connection Member 850

Hereinbelow, reference will be made to the connection member 850.

As shown in FIG. 27, the connection member 850 is provided at the lowerportion of the bottom plate 800, that is, the lower portion of the thirdbottom plate 830.

The connection member 850 functions to connect 1st-1st to 3rd-2ndexternal supply lines (not shown) and an external exhaust line (notshown) to the container 10 for storing a wafer.

As shown in FIG. 31, the connection member 850 is formed with 1st-1st to3rd-2nd main inlet holes 851 a to 853 b, the integrated exhaust path855, and a main exhaust hole 490.

The 1st-1st main inlet hole 851 a communicates with the 1st-1st and1st-3rd inlet holes 831 a and 831 c of the third bottom plate 830, the2nd-1st main inlet hole 852 a communicates with the 2nd-1st and 2nd-3rdinlet holes 832 a and 832 c of the third bottom plate 830, and the3rd-1st main inlet hole 853 a communicates with the 3rd-1st and 3rd-3rdinlet holes 833 a and 833 c of the third bottom plate 830.

The 1st-2nd main inlet hole 851 b communicates with the 1st-2nd and1st-4th inlet holes 831 b and 831 d of the third bottom plate 830, the2nd-2nd main inlet hole 852 b communicates with the 2nd-2nd and 2nd-4thinlet holes 832 b and 832 d of the third bottom plate 830, and the3rd-2nd main inlet hole 853 b communicates with the 3rd-2nd and 3rd-4thinlet holes 833 b and 833 d of the third bottom plate 830.

The 1st-1st to 3rd-2nd main inlet holes 851 a to 853 b are connectedwith the 1st-1st to 3rd-2nd external supply lines, respectively.

Accordingly, as the 1st-1st to 3rd-2nd external supply lines, that is,six external supply lines are controlled individually, six injectionmembers communicating with the 1st-1st to 3rd-2nd main inlet holes 851 ato 853 b can individually inject the purge gas into the first to thirdpurging areas 210, 220, and 230, which will be described in detailhereinafter.

The integrated exhaust path 855 functions as a path for communicatingthe second rear discharge hole 835 and the fourth to ninth dischargeholes 836 a, 836 b, 836 c, 837 a, 837 b, and 837 c of the second bottomplate 820, and the main exhaust hole 490 with each other.

The external exhaust line is connected to the main exhaust hole 490,whereby, the purge gas, the fumes of the wafer W, external gas, and thelike exhausted to the integrated exhaust path 855 can be easilydischarged outside the container 10 for storing a wafer.

Top Plate 900

As shown in FIGS. 1 to 3, the top plate 900 constitutes the top surfaceof the container 10 for storing a wafer, and functions to block theupper portion of the storage chamber 200.

In this case, the lower surface of the top plate 900 is coupled to theupper surface of the fourth horizontal member 114, the upper surface ofthe eighth horizontal member 118, and the upper surface of the exhaustmember 400.

The overall shape of the top plate 900 has the same shape as the overallshape of the bottom plate 800.

The top plate 900 may be provided with a wafer detection sensor (notshown) on the lower surface thereof.

The wafer detection sensor can detect whether the wafer W isaccommodated and whether the wafer W is supported on any support 600 ofthe plurality of supports 600.

Purge Gas Supply/Injection Flow of Container 10 for Storing Wafer

Hereinbelow, reference will be made to the purge gas supply/injectionflow of the container 10 for storing a wafer according to the preferredembodiment of the present invention.

As shown in FIG. 33, the purge gas supply/injection flow of thecontainer 10 for storing a wafer according to the preferred embodimentof the present invention is performed by the 1st-1st to 3rd-2nd externalsupply lines connected to the 1st-1st to 3rd-2nd main inlet holes 851 ato 853 b.

The 1st-1st external supply line supplies purge gas to the 1st-1stinjection member 310 a and the 1st-3rd injection member 310 c; and the1st-2nd external supply line supplies purge gas to the 1st-2nd injectionmember 310 b and the 1st-4th injection member 310 d. Accordingly, by the1st-1st external supply line and the 1st-2nd external supply line, purgegas is supplied to each of the 1st-1st to 1st-4th injection members 310a to 310 d, and the supplied purge gas is injected from the 1st-1st to1st-4th injection members 310 a to 310 d into the storage chamber 200,whereby the first purging area 210 is partitioned within the storagechamber 200.

The 2nd-1st external supply line supplies purge gas to the 2nd-1stinjection member 320 a and the 2nd-3rd injection member 320 c; and the2nd-2nd external supply line supplies purge gas to the 2nd-2nd injectionmember 320 b and the 2nd-4th injection member 320 d. Accordingly, by the2nd-1st external supply line and the 2nd-2nd external supply line, purgegas is supplied to each of the 2nd-1st to 2nd-4th injection members 320a to 320 d, and the supplied purge gas is injected from the 2nd-1st to2nd-4th injection members 320 a to 320 d into the storage chamber 200,whereby the second purging area 220 is partitioned within the storagechamber 200.

The 3rd-1st external supply line supplies purge gas to the 3rd-1stinjection member 330 a and the 3rd-3rd injection member 330 c; and the3rd-2nd external supply line supplies purge gas to the 3rd-2nd injectionmember 330 b and the 3rd-4th injection member 330 d. Accordingly, by the3rd-1st external supply line and the 3rd-2nd external supply line, purgegas is supplied to each of the 3rd-1st to 3rd-4th injection members 330a to 330 d, and the supplied purge gas is injected from the 3rd-1st to3rd-4th injection members 330 a to 330 d into the storage chamber 200,whereby the third purging area 230 is partitioned within the storagechamber 200.

Hereinbelow, reference will be made in detail to the purge gassupply/injection flow into the first to third purging areas 210, 220,and 230 individually performed by the 1st-1st to 3rd-2nd external supplylines.

Purge Gas Supply/Injection Flow by 1st-1st External Supply Line and1st-2nd External Supply Line

Hereinbelow, description will be made to the purge gas supply/injectionflow into the first purging area 210 performed by the 1st-1st externalsupply line and the 1st-2nd external supply line, with reference toFIGS. 4, 7, 12, 16, 32, and 33.

When purge gas is supplied from the 1st-1st external supply line, thepurge gas diverges and flows to the 1st-1st supply flow path 821 a andthe 1st-3rd supply flow path 821 c by the 1st-1st main inlet hole 851 aof the connection member 850.

The purge gas flowed to the 1st-1st supply flow path 821 a flows to the1st-1st supply communication hole 811 a, and flows to the 1st-1stvertical supply path 541 a to the first supply member 510. The purge gasflowed to the 1st-1st vertical supply path 541 a is supplied to theinside of the 1st-1st injection member 310 a through the 1st-1st supplyspace 531 a and the 1st-1st supply hole 371 a. The purge gas supplied tothe inside of the 1st-1st injection member 310 a is injected to the leftof the first purging area 210 through the injection holes 390.

The purge gas flowed to the 1st-3rd supply flow path 821 c flows to the1st-3rd supply communication hole 811 c, and flows to the 1st-3rdvertical supply path 541 c of the second supply member 520. The purgegas flowed to the 1st-3rd vertical supply path 541 c is supplied to theinside of the 1st-3rd injection member 310 c through the 1st-3rd supplyspace 531 c and the 1st-3rd supply hole 371 c. The purge gas supplied tothe inside of the 1st-3rd injection member 310 c is injected to theright of the first purging area 210 through the injection holes 390.

When purge gas is supplied from the 1st-2nd external supply line, thepurge gas diverges and flows to the 1st-2nd supply flow path 821 b andthe 1st-4th supply flow path 821 d by the 1st-2nd main inlet hole 851 bof the connection member 850.

The purge gas flowed to the 1st-2nd supply flow path 821 b flows to the1st-2nd supply communication hole 811 b, and flows to the 1st-2ndvertical supply path 541 b of the first supply member 510. The purge gasflowed to the 1st-2nd vertical supply path 541 b is supplied to theinside of the 1st-2nd injection member 310 b through the 1st-2nd supplyspace 531 b and the 1st-2nd supply hole 371 b. The purge gas supplied tothe inside of the 1st-2nd injection member 310 b is injected to the rearleft of the first purging area 210 through the injection holes 390.

The purge gas flowed to the 1st-4th supply flow path 821 d flows to the1st-4th supply communication hole 811 d, and flows to the 1st-4thvertical supply path 541 d of the second supply member 520. The purgegas flowed to the 1st-4th vertical supply path 541 d is supplied to theinside of the 1st-4th injection member 310 d through the 1st-4th supplyspace 531 d and the 1st-4th supply hole 371 d. The purge gas supplied tothe inside of the 1st-4th injection member 310 d is injected to the rearright of the first purging area 210 through the injection holes 390.

Purge Gas Supply/Injection Flow by 2nd-1st External Supply Line and2nd-2nd External Supply Line

Hereinbelow, description will be made to the purge gas supply/injectionflow into the second purging area 220 performed by the 2nd-1st externalsupply line and the 2nd-2nd external supply line, with reference toFIGS. 4, 7, 12, 16, 32, and 33.

When purge gas is supplied from the 2nd-1st external supply line, thepurge gas diverges and flows to the 2nd-1st supply flow path 822 a andthe 2nd-3rd supply flow path 822 c by the 2nd-1st main inlet hole 852 aof the connection member 850.

The purge gas flowed to the 2nd-1st supply flow path 822 a flows to the2nd-1st supply communication hole 812 a, and flows to the 2nd-1stvertical supply path 542 a of the first supply member 510. The purge gasflowed to the 2nd-1st vertical supply path 542 a is supplied to theinside of the 2nd-1st injection member 320 a through the 2nd-1st supplyspace 532 a and the 2nd-1st supply hole 372 a. The purge gas supplied tothe inside of the 2nd-1st injection member 320 a is injected to theright of the second purging area 220 through the injection holes 390.

The purge gas flowed to the 2nd-3rd supply flow path 822 c flows to the2nd-3rd supply communication hole 812 c, and flows to the 2nd-3rdvertical supply path 542 c of the second supply member 520. The purgegas flowed to the 2nd-3rd vertical supply path 542 c is supplied to theinside of the 2nd-3rd injection member 320 c through the 2nd-3rd supplyspace 532 c and the 2nd-3rd supply hole 372 c. The purge gas supplied tothe inside of the 2nd-3rd injection member 320 c is injected to theright of the second purging area 220 through the injection holes 390.

When purge gas is supplied from the 2nd-2nd external supply line, thepurge gas diverges and flows to the 2nd-2nd supply flow path 822 b andthe 2nd-4th supply flow path 822 d by the 2nd-2nd main inlet hole 852 bof the connection member 850.

The purge gas flowed to the 2nd-2nd supply flow path 822 b flows to the2nd-2nd supply communication hole 812 b, and flows to the 2nd-2ndvertical supply path 542 b of the first supply member 510. The purge gasflowed to the 2nd-2nd vertical supply path 542 b is supplied to theinside of the 2nd-2nd injection member 320 b through the 2nd-2nd supplyspace 532 b and the 2nd-2nd supply hole 372 b. The purge gas supplied tothe inside of the 2nd-2nd injection member 320 b is injected to the rearleft of the second purging area 220 through the injection holes 390.

The purge gas flowed to the 2nd-4th supply flow path 822 d flows to the2nd-4th supply communication hole 812 d, and flows to the 2nd-4thvertical supply path 542 d of the second supply member 520. The purgegas flowed to the 2nd-4th vertical supply path 542 d is supplied to theinside of the 2nd-4th injection member 320 d through the 2nd-4th supplyspace 532 d and the 2nd-4th supply hole 372 d. The purge gas supplied tothe inside of the 2nd-4th injection member 320 d is injected to the rearright of the second purging area 220 through the injection holes 390.

Purge Gas Supply/Injection Flow by 3rd-1st External Supply Line and3rd-2nd External Supply Line

Hereinbelow, description will be made to the purge gas supply/injectionflow into the third purging area 230 performed by the 3rd-1st externalsupply line and the 3rd-2nd external supply line, with reference toFIGS. 4, 7, 12, 16, 32, and 33.

When purge gas is supplied from the 3rd-1st external supply line, thepurge gas diverges and flows to the 3rd-1st supply flow path 823 a andthe 3rd-3rd supply flow path 823 c by the 3rd-1st main inlet hole 853 ato the connection member 850.

The purge gas flowed to the 3rd-1st supply flow path 823 a flows to the3rd-1st supply communication hole 813 a, and flows to the 3rd-1stvertical supply path 543 a of the first supply member 510. The purge gasflowed to the 3rd-1st vertical supply path 543 a is supplied to theinside of the 3rd-1st injection member 330 a through the 3rd-1st supplyspace 533 a and the 3rd-1st supply hole 373 a. The purge gas supplied tothe inside of the 3rd-1st injection member 330 a is injected to theright of the third purging area 230 through the injection holes 390.

The purge gas flowed to the 3rd-3rd supply flow path 823 c flows to the3rd-3rd supply communication hole 813 c, and flows to the 3rd-3rdvertical supply path 543 c of the second supply member 520. The purgegas flowed to the 3rd-3rd vertical supply path 543 c is supplied to theinside of the 3rd-3rd injection member 330 c through the 3rd-3rd supplyspace 533 c and the 3rd-3rd supply hole 373 c. The purge gas supplied tothe inside of the 3rd-3rd injection member 330 c is injected to theright of the third purging area 230 through the injection holes 390.

When purge gas is supplied from the 3rd-2nd external supply line, thepurge gas diverges and flows to the 3rd-2nd supply flow path 823 b andthe 3rd-4th supply flow path 823 d by the 3rd-2nd main inlet hole 853 bof the connection member 850.

The purge gas flowed to the 3rd-2nd supply flow path 823 b flows to the3rd-2nd supply communication hole 813 b, and flows to the 3rd-2ndvertical supply path 543 b of the first supply member 510. The purge gasflowed to the 3rd-2nd vertical supply path 543 b is supplied to theinside of the 3rd-2nd injection member 330 b through the 3rd-2nd supplyspace 533 b and the 3rd-2nd supply hole 373 b. The purge gas supplied tothe inside of the 3rd-2nd injection member 330 b is injected to the rearleft of the third purging area 230 through the injection holes 390.

The purge gas flowed to the 3rd-4th supply flow path 823 d flows to the3rd-4th supply communication hole 813 d, and flows to the 3rd-4thvertical supply path 543 d of the second supply member 520. The purgegas flowed to the 3rd-4th vertical supply path 543 d is supplied to theinside of the 3rd-4th injection member 330 d through the 3rd-4th supplyspace 533 d and the 3rd-4th supply hole 373 d. The purge gas supplied tothe inside of the 3rd-4th injection member 330 d is injected to the rearright of the third purging area 230 through the injection holes 390.

As described above, the container 10 for storing a wafer according tothe preferred embodiment of the present invention is configured suchthat the 1st-1st and 1st-3rd injection members 310 a and 310 c, the1st-2nd and 1st-4th injection members 310 b and 310 d, the 2nd-1st and2nd-3rd injection members 320 a and 320 c, the 2nd-2nd and 2nd-4thinjection members 320 b and 320 d, the 3rd-1st and 3rd-3rd injectionmembers 330 a and 330 c, and the 3rd-2nd and 3rd-4th injection members330 b and 330 d are individually supplied with purge gas by the 1st-1stto 3rd-2nd external supply lines, whereby it is possible to achievepurge gas injection into the first to third purging areas 210, 220, and230.

Accordingly, by controlling the purge gas supply of the 1st-1st to3rd-2nd external supply lines, it is possible to selectively injectpurge gas into a desired area of the first to third purging areas 210,220, and 230.

For example, when the robot arm stores wafers W only in supports 600located in the second purging area 220, purge gas is supplied from the2nd-1st external supply line and/or the 2nd-2nd external supply linesuch the purge gas is injected only into the second purging area 220,whereby it is possible to achieve purging of the wafer W located in thesecond purging area 220. Accordingly, unlike the conventional art,unnecessary waste of purge gas can be reduced.

Further, it is possible to ensure uniform purging of the wafer Waccommodated in the storage chamber 200.

For example, in the case where each of the 1st-1st to 3rd-2nd externalsupply lines is provided with a mass flow controller (MFC), when thepressure of the purge gas supplied to the 3rd-1st and 3rd-2nd externalsupply lines is increased by using the MFC, the pressure of the purgegas injected from the inside of the 3rd-1st to 3rd-4th injection members330 a to 330 d into the third purging area 230 through the injectionholes 390 is also increased. Accordingly, unlike the conventional art, asufficient amount of purge gas can be injected into the third purgingarea 230 disposed at the upper portion within the storage chamber 200,and in this way, it is possible to achieve uniform purging of the waferW accommodated in the storage chamber 200 by differently setting supplypressures of purge gas supplied from the 1st-1st to 3rd-2nd externalsupply lines.

Exhaust Flow of Purge Gas, Fumes, and External Gas of Container 10 forStoring Wafer

Hereinbelow, description will be made to the exhaust flow of the purgegas, the fumes of the wafer W, and the external gas of the container 10for storing a wafer according to the preferred embodiment of the presentinvention.

As shown in FIG. 34, the exhaust flow of the purge gas, the fumes of thewafer W, and the external gas of the container 10 for storing a waferaccording to the preferred embodiment of the present invention isperformed by the external exhaust line (not shown) connected to the mainexhaust hole 857.

The exhaust member 400 functions to exhaust the purge gas injected intothe first to third purging areas 210, 220, and 230 by the 1st-1st to3rd-2nd injection members 310 a to 330 d, and the fumes of the wafer W;and the first and second front exhaust members 710 and 750 function toexhaust the external gas outside the container 10 for storing a wafer.

Hereinbelow, reference will be made in detail to the exhaust flows ofthe exhaust member 400 and the first and second front exhaust members710 and 750.

Exhaust Flow of Purge Gas and Fumes by Exhaust Member 400

Hereinbelow, description will be made to the exhaust flow of the purgegas of the first to third purging areas 210, 220, and 230 and the fumesof the wafer W performed by the exhaust member 400, with reference toFIGS. 9, 14, 16, 32, and 34.

When a suction force is generated in the external exhaust line by asuction fan or the like, the purge gas and the fumes of the wafer W inthe first purging area 210 are flowed to the first exhaust space 410through the exhaust holes 490. The purge gas and the fumes of the waferW flowed to the first exhaust space 410 are flowed to the first exhaustcommunication hole 815 a through the first vertical exhaust path 411,and are flowed to the integrated exhaust path 855 via the first reardischarge hole 825, and the second rear discharge hole 835. The purgegas and the fumes of the wafer W flowed to the integrated exhaust path855 are flowed to the main exhaust hole 857, and then are exhaustedoutside the container 10 for storing a wafer through the externalexhaust line.

When a suction force is generated in the external exhaust line by asuction fan or the like, the purge gas and the fumes of the wafer W inthe second purging area 220 are flowed to the second exhaust space 420through the exhaust holes 490. The purge gas and the fumes of the waferW flowed to the second exhaust space 420 are flowed to the secondexhaust communication hole 815 b through the second vertical exhaustpath 421, and are flowed to the integrated exhaust path 855 via thefirst rear discharge hole 825, and the second rear discharge hole 835.The purge gas and the fumes of the wafer W flowed to the integratedexhaust path 855 are flowed to the main exhaust hole 857, and then areexhausted outside the container 10 for storing a wafer through theexternal exhaust line.

When a suction force is generated in the external exhaust line by asuction fan or the like, the purge gas and the fumes of the wafer W inthe third purging area 230 are flowed to the third exhaust space 430through the exhaust holes 490. The purge gas and the fumes of the waferW flowed to the third exhaust space 430 are flowed to the second exhaustcommunication hole 815 c through the third vertical exhaust path 431,and are flowed to the integrated exhaust path 855 via the first reardischarge hole 825, and the second rear discharge hole 835. The purgegas and the fumes of the wafer W flowed to the integrated exhaust path855 are flowed to the main exhaust hole 857, and then are exhaustedoutside the container 10 for storing a wafer through the externalexhaust line.

As described above, the purge gas and the fumes of the wafer W exhaustedthrough the exhaust member 400 are exhausted through respective exhaustpaths, that is, three exhaust paths, and are collected into one at thefirst rear discharge holes 825 of the second bottom plate 820 andexhausted.

This is to easily exhaust the purge gas and the fumes of the wafer Wthrough the suction force of one external exhaust line. Accordingly, toselectively exhaust the purge gas and the fumes of the wafer W of thefirst to third purging areas 210, 220, and 230, it is preferable thatthe first to third vertical exhaust paths 411, 42, and 431 are providedwith valves.

In other words, each of the first to third vertical exhaust paths 411,42, and 431 may be provided with a valve such as a solenoid valve, andby controlling the solenoid valve, it is possible to easily achieveselective exhaust of the purge gas and the fumes of the wafer W of thefirst to third purging areas 210, 220, and 230. Accordingly, when purgegas is selectively injected from the 1st-1st to 3rd-2nd injectionmembers 310 a to 330 d into the first to third purging areas 210, 220,and 230, at only the purging area where the purge gas is injected of thefirst to third purging areas 210, 220, and 230, the purge gas and thefumes of the wafer W can be exhausted.

As such, as purge gas injection into the first to third purging areas210, 220, and 230, and exhaust of purge gas and fumes are controlled tobe selectively performed, it is possible to further ensure uniformpurging of the wafer W, and is also possible to considerably reduceunnecessary waste of purge gas.

Further, unlike the above described embodiment, the exhaust member 400may function to inject purge gas by being connected to the externalsupply line, and in this case, it is possible to selectively injectpurge gas into each rear of the first to third purging areas 210, 220,and 230.

Exhaust Flow of External Gas by First Front Exhaust Members 710 and 750

Hereinbelow, description will be made to the exhaust flow of externalgas exhausted by the first and second front exhaust members 710 and 750,with reference to FIGS. 9, 14, 16, 32, and 34.

When a suction force is generated in the external exhaust line by asuction fan or the like, external gas outside the front left side of thecontainer 10 for storing a wafer is flowed to the fourth to sixthexhaust spaces 721 a, 721 b, and 721 c through the first exhaust slit720 of the first front exhaust member 710.

The external gas flowed to the fourth exhaust space 721 a is flowed tothe fourth exhaust communication hole 816 a through the fourth verticalexhaust path 731 a, and is flowed to the integrated exhaust path 855 viathe fourth exhaust flow path 826 a and the fourth discharge hole 836 a.The external gas flowed to the integrated exhaust path 855 is flowed tothe main exhaust hole 857, and then is exhausted outside the container10 for storing a wafer through the external exhaust line.

The external gas flowed to the fifth exhaust space 721 b is flowed tothe fifth exhaust communication hole 816 b through the fifth verticalexhaust path 731 b, and is flowed to the integrated exhaust path 855 viathe fifth exhaust flow path 826 b and the fifth discharge hole 836 b.The external gas flowed to the integrated exhaust path 855 is flowed tothe main exhaust hole 857, and then is exhausted outside the container10 for storing a wafer through the external exhaust line.

The external gas flowed to the sixth exhaust space 721 c is flowed tothe sixth exhaust communication hole 816 c through the sixth verticalexhaust path 731 c, and is flowed to the integrated exhaust path 855 viathe fifth exhaust flow path 826 c and the fifth discharge hole 836 c.The external gas flowed to the integrated exhaust path 855 is flowed tothe main exhaust hole 857, and then is exhausted outside the container10 for storing a wafer through the external exhaust line.

When a suction force is generated in the external exhaust line by asuction fan or the like, external gas outside the front right side ofthe container 10 for storing a wafer is flowed to the seventh to ninthexhaust spaces 761 a, 761 b, and 761 c through the second exhaust slit760 of the second front exhaust member 750.

The external gas flowed to the seventh exhaust space 761 a is flowed tothe seventh exhaust communication hole 817 a through the seventhvertical exhaust path 771, and is flowed to the integrated exhaust path855 via the seventh exhaust flow path 827 a and the seventh dischargehole 837 a. The external gas flowed to the integrated exhaust path 855is flowed to the main exhaust hole 857, and then is exhausted outsidethe container 10 for storing a wafer through the external exhaust line.

The external gas flowed to the eighth exhaust space 761 b is flowed tothe eighth exhaust communication hole 817 b through the eighth verticalexhaust path 771 b, and is flowed to the integrated exhaust path 855 viathe eighth exhaust flow path 827 b and the eighth discharge hole 837 b.The external gas flowed to the integrated exhaust path 855 is flowed tothe main exhaust hole 857, and then is exhausted outside the container10 for storing a wafer through the external exhaust line.

The external gas flowed to the ninth exhaust space 761 c is flowed tothe ninth exhaust communication hole 817 c through the ninth verticalexhaust path 771 c, and is flowed to the integrated exhaust path 855 viathe ninth exhaust flow path 827 c and the ninth discharge hole 837 c.The external gas flowed to the integrated exhaust path 855 is flowed tothe main exhaust hole 857, and then is exhausted outside the container10 for storing a wafer through the external exhaust line.

As such, as the first and second front exhaust members 710 and 750exhaust external gas outside the front left and right sides of thecontainer 10 for storing a wafer, respectively, it is possible toprevent external gas from entering the storage chamber 200 through thefront opening 251, and thus, it is possible to prevent purging of thewafer W in the first to third purging areas 210, 220, and 230 from beinghindered.

As described above, the external gas exhausted through the first andsecond front exhaust members 710 and 750 is exhausted through respectiveexhaust paths, that is, six exhaust paths, and are collected into one atthe integrated exhaust path 855 of the connection member 850 andexhausted.

This is to easily exhaust the external gas through the suction force ofone external exhaust line. Accordingly, to selectively exhaust externalgas at heights corresponding to the first to third purging areas 210,220, and 230, it is preferable that the fourth to ninth exhaust flowpaths 826 a, 826 b, 826 c, 827 a, 827 b, and 827 c are provided withvalves.

In other words, each of the fourth to ninth exhaust flow paths 826 a,826 b, 826 c, 827 a, 827 b, and 827 c may be provided with a valve suchas a solenoid valve, and by controlling the solenoid valve, it ispossible to easily achieve selective exhaust of external gas at heightscorresponding to the first to third purging areas 210, 220, and 230.

Accordingly, as described above, when purge gas is selectively injectedinto and exhausted from one of the first to third purging areas 210,220, and 230, it is possible to selectively exhaust external gascorresponding to the height of the selected purging area, whereby it ispossible to block external gas from entering the purging area, where thepurging is performed, in advance.

Further, unlike the above described embodiment, the first and secondfront exhaust members 710 and 750 may function to inject purge gas bybeing connected to the external supply line, and in this case, it ispossible to inject purge gas into the outside of the front left andright sides of the container 10 for storing a wafer.

The reason why purge gas is injected through the first and second frontexhaust members 710 and 750 is to prevent fumes from remaining in othersemiconductor processing equipment located outside the container 10 forstoring a wafer and to prevent the contaminated external gas fromentering the storage chamber 200 by injecting purge gas when thecontamination of the external gas is severe outside the container 10 forstoring a wafer (for example, the fumes remain outside the container 10for storing a wafer).

Although a preferred embodiment of the present invention has beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

DESCRIPTION OF REFERENCE CHARACTERS OF IMPORTANT PARTS

-   -   10: container for storing a wafer    -   111˜118: first to eighth horizontal members    -   121˜126: first to sixth vertical members    -   200: storage chamber, 210: first purging area    -   220: second purging area, 230: third purging area    -   251: front opening    -   310: first injection member, 310 a˜310 d: 1st-1st to 1st-4th        injection members    -   320: second injection member, 320 a˜320 d: 2nd-1st to 2nd-4th        injection members    -   330: third injection member, 330 a˜330 d: 3rd-1st to 3rd-4th        injection members    -   340: first injection member inner wall surface,    -   345: first support coupling part    -   350: second injection member inner wall surface,    -   355: second support coupling part    -   361: first injection member outer wall surface,    -   362: second injection member outer wall surface    -   371 a˜371 d: 1st-1st to 1st-4th supply holes    -   372 a˜372 d: 2nd-1st to 2nd-4th supply holes    -   373 a˜373 d: 3rd-1st to 3rd-4th supply holes    -   390: injection hole    -   400: exhaust member, 410: first exhaust space    -   411: first vertical exhaust path, 420: second exhaust space    -   421: second vertical exhaust path, 430: third exhaust space    -   431: third vertical exhaust path, 440: exhaust member inner wall        surface    -   490: exhaust hole    -   510: first supply member, 520: second supply member    -   531 a˜531 d: 1st-1st to 1st-4th supply spaces    -   532 a˜532 d: 2nd-1st to 2nd-4th supply spaces    -   533 a˜533 d: 3rd-1st to 3rd-4th supply spaces    -   541 a˜541 d: 1st-1st to 1st-4th vertical supply paths    -   542 a˜542 d: 2nd-1st to 2nd-4th vertical supply paths    -   543 a˜543 d: 3rd-1st to 3rd-4th vertical supply paths    -   600: support, 610: rear support part    -   611: rear arc portion, 612: rear protrusion    -   620: left support part, 621: left arc portion    -   622: left protrusion, 630: right support part    -   631: right arc portion, 632: right protrusion    -   640: left inclined portion, 650: right inclined portion    -   660: left concave portion, 670: right concave portion    -   710: first front exhaust member, 720: first exhaust slit    -   721 a˜721 c: fourth to sixth exhaust spaces    -   731 a˜731 c: fourth to sixth vertical exhaust paths    -   750: second front exhaust member, 760: second exhaust slit    -   761 a˜761 c: seventh to ninth exhaust spaces    -   771 a˜771 c: seventh to ninth vertical exhaust paths    -   800: bottom plate, 810: first bottom plate    -   811 a˜811 d: 1st-1st to 1st-4th supply communication holes    -   812 a˜812 d: 2nd-1st to 2nd-4th supply communication holes    -   813 a˜813 d: 3rd-1st to 3rd-4th supply communication holes    -   815 a˜815 c: first to third exhaust communication holes    -   816 a˜816 c: fourth to sixth exhaust communication holes    -   817 a˜817 c: seventh to ninth exhaust communication holes    -   820: second bottom plate    -   821 a˜821 d: 1st-1st to 1st-4th supply flow paths    -   822 a˜822 d: 2nd-1st to 2nd-4th supply flow paths    -   823 a˜823 d: 3rd-1st to 3rd-4th supply flow paths    -   825: first rear discharge hole    -   826 a˜826 c: fourth to sixth exhaust flow paths    -   827 a˜827 c: seventh to ninth exhaust flow paths    -   830: third bottom plate    -   831 a˜831 d: 1st-1st to 1st-4th inlet holes    -   832 a˜832 d: 2nd-1st to 2nd-4th inlet holes    -   833 a˜833 d: 3rd-1st to 3rd-4th inlet holes    -   835: second rear discharge hole    -   836 a˜836 c: fourth to sixth discharge holes    -   837 a˜837 c: seventh to ninth discharge holes    -   850: connection member, 851 a: 1st-1st main inlet hole    -   851 b: 1st-2nd main inlet hole, 852 a: 2nd-1st main inlet hole    -   852 b: 2nd-2nd main inlet hole, 853 a: 3rd-1st main inlet hole    -   853 b: 3rd-2nd main inlet hole, 855: integrated exhaust path    -   857: main exhaust hole, 860: stand member    -   900: top plate, W: wafer

The invention claimed is:
 1. A container for storing a wafer, thecontainer comprising: a storage chamber configured such that a wafer isstored therein through a front opening, the storage chamber beingdivisible into a plurality of purging areas in a vertical direction, theplurality of purging areas being formed to communicate with each otherin the storage chamber; a plurality of injection members configured toinject purge gas into the storage chamber; an exhaust member configuredto exhaust the purge gas and fumes of the storage chamber; an injectionmember inner wall surface provided with each of the plurality ofinjection members in contact with the storage chamber, the injectionmember inner wall surface being formed with a plurality of injectionholes to allow the purge gas to be injected into the storage chamber;and a supply member provided with a plurality of supply spaces, theplurality of supply spaces being configured to communicate with theplurality of injection members to supply the purge gas to the pluralityof injection members, respectively, wherein the injection members areindividually supplied with the purge gas through the plurality of supplyspaces, respectively, wherein the injection members inject the purge gasinto the purging areas, respectively, wherein the exhaust member isprovided with an exhaust member inner wall surface in contact with thestorage chamber, wherein the exhaust member inner wall surface is formedwith a plurality of exhaust holes to allow the purge gas and the fumesof the storage chamber to be exhausted to the exhaust member, whereinthe exhaust member is provided with a plurality of exhaust spacescommunicating with the plurality of exhaust holes and a plurality ofvertical exhaust paths communicating with the plurality of exhaustspaces, respectively, and wherein the plurality of exhaust spaces arearranged on top of another in the vertical direction within the exhaustmember to correspond to the plurality of purging areas dividedvertically.
 2. The container of claim 1, wherein the plurality ofinjection members is arranged on top of another in the verticaldirection to correspond to the plurality of purging areas dividedvertically.
 3. The container of claim 2, wherein the supply member isprovided with a plurality of vertical supply paths extending in verticaldirections, and the plurality of vertical supply paths communicates withthe plurality of injection members, respectively.